Diodes Incorporated DDTD113ZC-7-F

Name: DDTD113ZC-7-F
Brand: Diodes Incorporated
SKU: 3585589-DDTD113ZC-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DDTD113ZC-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 3585589-DDTD113ZC-7-F

Description:: TRANS PREBIAS NPN 200MW SOT23-3

ECAD Model:

Datasheet:: DDTD113ZC-7-F

Specifications

Diodes Incorporated DDTD113ZC-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DDTD113ZC-7-F.

Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 10
HTS Code
8541.21.00.75
Subcategory
BIP General Purpose Small Signal
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DTD113
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Transistor Type
NPN - Pre-Biased
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 50mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
200MHz
Max Breakdown Voltage
50V
Frequency - Transition
200MHz
hFE Min
56
Resistor - Base (R1)
1 k Ω
Continuous Collector Current
500mA
Resistor - Emitter Base (R2)
10 k Ω
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DDTD113ZC-7-F Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DDTD113ZC-7-F or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DDTD113ZC-7-F. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DDTD113ZC-7-F More Descriptions

DDTDxxxxC Series NPN 50 V 500 mA 1 kO/10 kO Pre-Baised Transistor - SOT-23
Trans Digital BJT NPN 500mA 3Pin SOT23 | Diodes Inc DDTD113ZC-7-F
56@50mA,5V 1 NPN - Pre Biased 200mW 500mA 50V 500nA SOT-23 Digital Transistors ROHS
Trans Digital BJT NPN 40V 500mA Automotive 3-Pin SOT-23 T/R
PRE-BIASED TRANSISTOR, NPN, SMDIODETVSA/S (SMB),12MM/T,DIGITAL TRANSISTOR, 50V, 0.5A, SOT23; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 500mA; Base Input Resistor R1: 1kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-23; No. of Pins: 3 Pin; Product Range: DDTDxxxxC Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to DDTD113ZC-7-F.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Max Breakdown Voltage

Frequency - Transition

hFE Min

Resistor - Base (R1)

Continuous Collector Current

Resistor - Emitter Base (R2)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Configuration

Power - Max

Polarity/Channel Type

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Power Dissipation-Max (Abs)

Voltage - Rated DC

Current Rating

Emitter Base Voltage (VEBO)

View Compare
DDTD113ZC-7-F

Diodes Incorporated

19 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

150°C

-55°C

BUILT IN BIAS RESISTOR RATIO IS 10

8541.21.00.75

BIP General Purpose Small Signal

200mW

DUAL

GULL WING

260

40

DTD113

3

1

NPN

Single

NPN - Pre-Biased

300mV

500mA

56 @ 50mA 5V

500nA

300mV @ 2.5mA, 50mA

50V

200MHz

50V

200MHz

56

1 k Ω

500mA

10 k Ω

1mm

3.05mm

1.4mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DDTD114EC-7-F

Diodes Incorporated

19 Weeks

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

-

BUILT IN BIAS RESISTOR RATIO IS 1

8541.21.00.75

BIP General Purpose Small Signal

-

DUAL

GULL WING

260

40

DTD114

3

1

-

-

NPN - Pre-Biased

-

-

56 @ 50mA 5V

500nA

300mV @ 2.5mA, 50mA

-

200MHz

-

200MHz

-

10 k Ω

-

10 k Ω

-

-

-

-

ROHS3 Compliant

-

YES

SILICON

R-PDSO-G3

Not Qualified

150°C

SINGLE WITH BUILT-IN RESISTOR

200mW

NPN

50V

500mA

0.2W

-

-

-

DDTD113ZC-7-F vs DDTD114EC-7-F
DDTD122LU-7-F

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

3

6.010099mg

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO IS 45.45

-

BIP General Purpose Small Signal

200mW

DUAL

GULL WING

260

40

-

3

1

NPN

Single

NPN - Pre-Biased

300mV

500mA

56 @ 50mA 5V

500nA

300mV @ 2.5mA, 50mA

50V

200MHz

50V

200MHz

100

220 Ω

500mA

10 k Ω

1mm

2.2mm

1.35mm

-

ROHS3 Compliant

Lead Free

-

-

-

Not Qualified

-

-

-

-

-

-

-

50V

500mA

5V

DDTD113ZC-7-F vs DDTD122LU-7-F
DDTD114GU-7-F

Diodes Incorporated

19 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

3

6.010099mg

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

150°C

-55°C

BUILT-IN BIAS RESISTOR

8541.21.00.75

BIP General Purpose Small Signal

200mW

DUAL

GULL WING

260

40

DTD114

3

1

NPN

Single

NPN - Pre-Biased

300mV

500mA

56 @ 5mA 5V

500nA ICBO

300mV @ 2.5mA, 50mA

50V

200MHz

-

200MHz

56

-

500mA

10 k Ω

1mm

2.2mm

1.35mm

-

ROHS3 Compliant

-

-

-

-

Not Qualified

-

-

-

-

-

-

-

-

-

-

DDTD113ZC-7-F vs DDTD114GU-7-F