Cypress Semiconductor Corp CY62147DV30L-55ZSXE
- Part Number:
- CY62147DV30L-55ZSXE
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3252363-CY62147DV30L-55ZSXE
- Description:
- IC SRAM 4MBIT 55NS 44TSOP
- Datasheet:
- CY62147DV30
Description
The CY62147DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. It features an advanced circuit design to provide ultra-low active current, making it ideal for portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when deselected.
Features
Temperature Ranges:
Industrial: -40°C to 85°C
Automotive-A: -40°C to 85°C
Automotive-E: -40°C to 125°C
Very high speed: 45 ns
Wide voltage range: 2.20V-3.60V
Pin-compatible with CY62147CV25, CY62147CV30, and CY62147CV33
Ultra-low active power:
Typical active current: 1.5 mA @ f = 1 MHz
Typical active current: 8 mA @ f = max
Ultra-low standby power
Easy memory expansion with CE and OE features
Automatic power-down when deselected
CMOS for optimum speed/power
Available in Pb-free and non Pb-free 48-ball VFBGA and non Pb-free 44-pin TSOPII
Byte power-down feature
Applications
Portable devices (e.g., cellular telephones)
Battery-powered systems
Low-power applications
The CY62147DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. It features an advanced circuit design to provide ultra-low active current, making it ideal for portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when deselected.
Features
Temperature Ranges:
Industrial: -40°C to 85°C
Automotive-A: -40°C to 85°C
Automotive-E: -40°C to 125°C
Very high speed: 45 ns
Wide voltage range: 2.20V-3.60V
Pin-compatible with CY62147CV25, CY62147CV30, and CY62147CV33
Ultra-low active power:
Typical active current: 1.5 mA @ f = 1 MHz
Typical active current: 8 mA @ f = max
Ultra-low standby power
Easy memory expansion with CE and OE features
Automatic power-down when deselected
CMOS for optimum speed/power
Available in Pb-free and non Pb-free 48-ball VFBGA and non Pb-free 44-pin TSOPII
Byte power-down feature
Applications
Portable devices (e.g., cellular telephones)
Battery-powered systems
Low-power applications
Cypress Semiconductor Corp CY62147DV30L-55ZSXE technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp CY62147DV30L-55ZSXE.
- Mounting TypeSurface Mount
- Package / Case44-TSOP (0.400, 10.16mm Width)
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTube
- Published2006
- SeriesMoBL®
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations44
- ECCN Code3A991.B.2.A
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- HTS Code8542.32.00.41
- TechnologySRAM - Asynchronous
- Voltage - Supply2.2V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.8mm
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)20
- Base Part NumberCY62147
- Pin Count44
- JESD-30 CodeR-PDSO-G44
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies2.5/3.3V
- Supply Voltage-Min (Vsup)2.2V
- Memory Size4Mb 256K x 16
- Memory TypeVolatile
- Supply Current-Max0.015mA
- Memory FormatSRAM
- Memory InterfaceParallel
- Organization256KX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page55ns
- Standby Current-Max0.000015A
- Memory Density4194304 bit
- Access Time (Max)55 ns
- I/O TypeCOMMON
- Standby Voltage-Min1.5V
- Height Seated (Max)1.194mm
- Length18.415mm
- Width10.16mm
- RoHS StatusROHS3 Compliant
The three parts on the right have similar specifications to CY62147DV30L-55ZSXE.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeSupply Current-MaxMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityAccess Time (Max)I/O TypeStandby Voltage-MinHeight Seated (Max)LengthWidthRoHS StatusFactory Lead TimeView Compare
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CY62147DV30L-55ZSXESurface Mount44-TSOP (0.400, 10.16mm Width)YES-40°C~125°C TATube2006MoBL®e4yesObsolete3 (168 Hours)443A991.B.2.ANickel/Palladium/Gold (Ni/Pd/Au)8542.32.00.41SRAM - Asynchronous2.2V~3.6VDUAL26013V0.8mmunknown20CY6214744R-PDSO-G44Not Qualified3.6V2.5/3.3V2.2V4Mb 256K x 16Volatile0.015mASRAMParallel256KX163-STATE1655ns0.000015A4194304 bit55 nsCOMMON1.5V1.194mm18.415mm10.16mmROHS3 Compliant--
-
Surface Mount44-TSOP (0.400, 10.16mm Width)--40°C~85°C TATape & Reel (TR)-MoBL®--Active3 (168 Hours)----SRAM - Asynchronous1.65V~2.2V--------------4Mb 256K x 16Volatile-SRAMParallel---55ns--------ROHS3 Compliant13 Weeks
-
Surface Mount44-TSOP (0.400, 10.16mm Width)YES-40°C~85°C TATube-MoBL®e4yesObsolete3 (168 Hours)32-NICKEL PALLADIUM GOLD-SRAM - Asynchronous2.2V~3.6VDUAL26013V1.27mmunknown20-32R-PDSO-G32COMMERCIAL3.6V-2.2V2Mb 256K x 8Volatile-SRAMParallel256KX8-845ns-2097152 bit45 ns--1.2mm20.95mm10.16mmROHS3 Compliant-
-
Surface Mount32-TFSOP (0.724, 18.40mm Width)YES-40°C~125°C TATube-MoBL®e3/e4yesObsolete3 (168 Hours)32-MATTE TIN/NICKEL PALLADIUM GOLD-SRAM - Asynchronous4.5V~5.5VDUAL26015V0.5mmunknown20-32R-PDSO-G32COMMERCIAL5.5V-4.5V1Mb 128K x 8Volatile-SRAMParallel128KX8-870ns-1048576 bit70 ns--1.2mm18.4mm8mmROHS3 Compliant-
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