Vishay Semiconductor Diodes Division BYV26EGPHE3/73

Name: BYV26EGPHE3/73
Brand: Vishay Semiconductor Diodes Division
SKU: 2829382-BYV26EGPHE3/73
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BYV26EGPHE3/73

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 2829382-BYV26EGPHE3/73

Description:: DIODE GEN PURP 1KV 1A DO204AC

ECAD Model:

Datasheet:: BYV26EGPHE3/73

Specifications

Vishay Semiconductor Diodes Division BYV26EGPHE3/73 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BYV26EGPHE3/73.

Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Diode Element Material
SILICON
Packaging
Tape & Box (TB)
Series
SUPERECTIFIER®
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
FREE WHEELING DIODE, HIGH RELIABILITY
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BYV26EGP
Pin Count
2
JESD-30 Code
O-PALF-W2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If
2.5V @ 1A
Case Connection
ISOLATED
Forward Current
1A
Operating Temperature - Junction
-65°C~175°C
Max Surge Current
30A
Output Current-Max
1A
Voltage - DC Reverse (Vr) (Max)
1000V
Max Reverse Voltage (DC)
1kV
Average Rectified Current
1A
Reverse Recovery Time
75 ns
Peak Reverse Current
5μA
Max Repetitive Reverse Voltage (Vrrm)
1kV
Capacitance @ Vr, F
15pF @ 4V 1MHz
Peak Non-Repetitive Surge Current
30A
Reverse Voltage
1kV
Recovery Time
75 ns
RoHS Status
ROHS3 Compliant

Description

BYV26EGPHE3/73 Overview
An appropriate reverse voltage is 1kV.Devices with this rating have an average rectified current of 1A volts.1A is the maximum value of forward current.There can be no surge current above 30A.There is no maximum output current when the value is 1A.Using the data chart, the peak reverse is 5μA in the datasheets.

BYV26EGPHE3/73 Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 5μA

BYV26EGPHE3/73 Applications
There are a lot of Vishay Semiconductor Diodes Division
BYV26EGPHE3/73 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BYV26EGPHE3/73 More Descriptions

Diode Switching 1KV 1A 2-Pin DO-15 Ammo
DIODE UFAST 1A 1000V DO-204AC
DIODE GEN PURP 1KV 1A DO204AC
Rectifier Diodes

Product Comparison

The three parts on the right have similar specifications to BYV26EGPHE3/73.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Surge Current

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Reverse Voltage

Recovery Time

RoHS Status

Factory Lead Time

Number of Pins

Forward Voltage

Diameter

Height

Length

Radiation Hardening

Lead Free

Application

Number of Phases

Terminal Finish

Current Rating

View Compare
BYV26EGPHE3/73

Vishay Semiconductor Diodes Division

Tin

Through Hole

Through Hole

DO-204AC, DO-15, Axial

SILICON

Tape & Box (TB)

SUPERECTIFIER®

2012

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

175°C

-65°C

FREE WHEELING DIODE, HIGH RELIABILITY

8541.10.00.80

Rectifier Diodes

WIRE

NOT SPECIFIED

unknown

NOT SPECIFIED

BYV26EGP

2

O-PALF-W2

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

5μA @ 1000V

2.5V @ 1A

ISOLATED

1A

-65°C~175°C

30A

1A

1000V

1kV

1A

75 ns

5μA

1kV

15pF @ 4V 1MHz

30A

1kV

75 ns

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-
BYV26EGP-E3/73

Vishay Semiconductor Diodes Division

Tin

Through Hole

Through Hole

DO-204AC, DO-15, Axial

SILICON

Tape & Box (TB)

SUPERECTIFIER®

2016

e3

yes

Active

1 (Unlimited)

2

EAR99

175°C

-65°C

FREE WHEELING DIODE, HIGH RELIABILITY

8541.10.00.80

Rectifier Diodes

WIRE

-

-

-

BYV26EGP

2

-

-

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

5μA @ 1000V

2.5V @ 1A

ISOLATED

1A

-65°C~175°C

30A

1A

1000V

1kV

1A

75 ns

5μA

1kV

15pF @ 4V 1MHz

30A

1kV

75 ns

ROHS3 Compliant

22 Weeks

2

2.5V

3.6mm

7.6mm

7.6mm

No

Lead Free

-

-

-

-

BYV26EGPHE3/73 vs BYV26EGP-E3/73
BYV29-400-E3/45

Vishay Semiconductor Diodes Division

Tin

Through Hole

Through Hole

TO-220-2

SILICON

Tube

-

2011

e3

yes

Active

1 (Unlimited)

2

EAR99

150°C

-40°C

FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

-

NOT SPECIFIED

unknown

NOT SPECIFIED

BYV29-400

3

-

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 400V

1.25V @ 8A

CATHODE

8A

-40°C~150°C

110A

8A

-

400V

8A

50 ns

10μA

400V

-

110A

400V

50 ns

ROHS3 Compliant

18 Weeks

2

1.4V

-

-

-

-

-

EFFICIENCY

1

-

-

BYV26EGPHE3/73 vs BYV29-400-E3/45
BYV27-150-TR

Vishay Semiconductor Diodes Division

-

Through Hole

Through Hole

SOD-57, Axial

SILICON

Tape & Reel (TR)

-

2011

e2

yes

Active

1 (Unlimited)

2

EAR99

175°C

-55°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

WIRE

-

-

-

-

2

-

-

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

1μA @ 165V

1.07V @ 3A

ISOLATED

2A

-55°C~175°C

50A

2A

-

165V

2A

25 ns

1μA

150V

-

50A

150V

25 ns

ROHS3 Compliant

12 Weeks

2

1.07V

-

-

-

No

Lead Free

ULTRA FAST RECOVERY

1

Tin/Silver (Sn/Ag)

2A

BYV26EGPHE3/73 vs BYV27-150-TR