Vishay Semiconductor Diodes Division BYV26EGP-E3/73

Name: BYV26EGP-E3/73
Brand: Vishay Semiconductor Diodes Division
SKU: 3581851-BYV26EGP-E3/73
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BYV26EGP-E3/73

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 3581851-BYV26EGP-E3/73

Description:: DIODE AVALANCHE 1000V 1A DO204AC

ECAD Model:

Datasheet:: BYV26EGP-E3/73

Specifications

Vishay Semiconductor Diodes Division BYV26EGP-E3/73 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BYV26EGP-E3/73.

Factory Lead Time
22 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Number of Pins
2
Diode Element Material
SILICON
Packaging
Tape & Box (TB)
Series
SUPERECTIFIER®
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
FREE WHEELING DIODE, HIGH RELIABILITY
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Form
WIRE
Base Part Number
BYV26EGP
Pin Count
2
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Avalanche
Current - Reverse Leakage @ Vr
5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If
2.5V @ 1A
Case Connection
ISOLATED
Forward Current
1A
Operating Temperature - Junction
-65°C~175°C
Max Surge Current
30A
Output Current-Max
1A
Voltage - DC Reverse (Vr) (Max)
1000V
Forward Voltage
2.5V
Max Reverse Voltage (DC)
1kV
Average Rectified Current
1A
Reverse Recovery Time
75 ns
Peak Reverse Current
5μA
Max Repetitive Reverse Voltage (Vrrm)
1kV
Capacitance @ Vr, F
15pF @ 4V 1MHz
Peak Non-Repetitive Surge Current
30A
Reverse Voltage
1kV
Recovery Time
75 ns
Diameter
3.6mm
Height
7.6mm
Length
7.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BYV26EGP-E3/73 Overview
An acceptable reverse voltage would be 1kV.As a result, this device has a rectified current of 1A volts on average.Phase diode rectifier is permissible for forward current to reach 1A.There is no maximum value for 30A surge current.Using the output current as an example, 1A is the maximum value.Based on the data charts in the datasheets, the peak reverse is 5μA.

BYV26EGP-E3/73 Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 5μA

BYV26EGP-E3/73 Applications
There are a lot of Vishay Semiconductor Diodes Division
BYV26EGP-E3/73 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BYV26EGP-E3/73 More Descriptions

DIODE, FAST, 1A, 1KV, DO-204AC-2; Diode Type:Fast Recovery; Diode Configuration:
Rectifier Diode, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC
BYV26EGP-E3/73, Diode, 1000V 1A, 75ns, 2-Pin DO-214AC | Siliconix / Vishay BYV26EGP-E3/73
BYV26E Series 1000 V 1 A Ultrafast Avalanche Sinterglass Diode - DO-204AC

Product Comparison

The three parts on the right have similar specifications to BYV26EGP-E3/73.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Terminal Form

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Surge Current

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Reverse Voltage

Recovery Time

Diameter

Height

Length

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Reach Compliance Code

Reference Standard

JESD-30 Code

Operating Temperature (Max)

Configuration

Application

Current - Average Rectified (Io)

Number of Phases

Rep Pk Reverse Voltage-Max

JEDEC-95 Code

Non-rep Pk Forward Current-Max

Reverse Current-Max

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Current Rating

View Compare
BYV26EGP-E3/73

Vishay Semiconductor Diodes Division

22 Weeks

Tin

Through Hole

Through Hole

DO-204AC, DO-15, Axial

2

SILICON

Tape & Box (TB)

SUPERECTIFIER®

2016

e3

yes

Active

1 (Unlimited)

2

EAR99

175°C

-65°C

FREE WHEELING DIODE, HIGH RELIABILITY

8541.10.00.80

Rectifier Diodes

WIRE

BYV26EGP

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

5μA @ 1000V

2.5V @ 1A

ISOLATED

1A

-65°C~175°C

30A

1A

1000V

2.5V

1kV

1A

75 ns

5μA

1kV

15pF @ 4V 1MHz

30A

1kV

75 ns

3.6mm

7.6mm

7.6mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BYV25F-600,127

WeEn Semiconductors

-

-

-

Through Hole

TO-220-2

-

SILICON

Tube

-

-

e3

-

Active

1 (Unlimited)

2

-

-

-

-

-

-

-

BYV25-600

-

1

-

Fast Recovery =< 500ns, > 200mA (Io)

Standard

50μA @ 600V

1.9V @ 5A

CATHODE

-

150°C Max

-

-

600V

-

-

-

35ns

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

NO

Tin (Sn)

SINGLE

not_compliant

IEC-60134

R-PSFM-T2

150°C

SINGLE

ULTRA FAST SOFT RECOVERY POWER

5A

1

600V

TO-220AC

66A

50μA

-

-

-

-

BYV26EGP-E3/73 vs BYV25F-600,127
BYV29-400-E3/45

Vishay Semiconductor Diodes Division

18 Weeks

Tin

Through Hole

Through Hole

TO-220-2

2

SILICON

Tube

-

2011

e3

yes

Active

1 (Unlimited)

2

EAR99

150°C

-40°C

FREE WHEELING DIODE

8541.10.00.80

Rectifier Diodes

-

BYV29-400

3

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 400V

1.25V @ 8A

CATHODE

8A

-40°C~150°C

110A

8A

-

1.4V

400V

8A

50 ns

10μA

400V

-

110A

400V

50 ns

-

-

-

-

ROHS3 Compliant

-

-

-

-

unknown

-

-

-

-

EFFICIENCY

-

1

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

-

BYV26EGP-E3/73 vs BYV29-400-E3/45
BYV27-150-TR

Vishay Semiconductor Diodes Division

12 Weeks

-

Through Hole

Through Hole

SOD-57, Axial

2

SILICON

Tape & Reel (TR)

-

2011

e2

yes

Active

1 (Unlimited)

2

EAR99

175°C

-55°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

WIRE

-

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

1μA @ 165V

1.07V @ 3A

ISOLATED

2A

-55°C~175°C

50A

2A

-

1.07V

165V

2A

25 ns

1μA

150V

-

50A

150V

25 ns

-

-

-

No

ROHS3 Compliant

Lead Free

-

Tin/Silver (Sn/Ag)

-

-

-

-

-

-

ULTRA FAST RECOVERY

-

1

-

-

-

-

-

-

-

2A

BYV26EGP-E3/73 vs BYV27-150-TR