Vishay Semiconductor Diodes Division BYV26E-TAP

Name: BYV26E-TAP
Brand: Vishay Semiconductor Diodes Division
SKU: 2422985-BYV26E-TAP
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BYV26E-TAP

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 2422985-BYV26E-TAP

Description:: DIODE AVALANCHE 1000V 1A SOD57

ECAD Model:

Datasheet:: BYV26E-TAP

Specifications

Vishay Semiconductor Diodes Division BYV26E-TAP technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BYV26E-TAP.

Factory Lead Time
12 Weeks
Contact Plating
Silver, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
SOD-57, Axial
Number of Pins
2
Diode Element Material
SILICON
Packaging
Tape & Box (TB)
Published
2006
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Silver (Sn96.5Ag3.5)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Form
WIRE
Current Rating
1A
Base Part Number
BYV26E
Pin Count
2
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Avalanche
Current - Reverse Leakage @ Vr
5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If
2.5V @ 1A
Case Connection
ISOLATED
Forward Current
1A
Operating Temperature - Junction
-55°C~175°C
Max Surge Current
30A
Output Current-Max
1A
Voltage - DC Reverse (Vr) (Max)
1000V
Forward Voltage
2.5V
Max Reverse Voltage (DC)
1kV
Average Rectified Current
1A
Reverse Recovery Time
75 ns
Peak Reverse Current
5μA
Max Repetitive Reverse Voltage (Vrrm)
1kV
Peak Non-Repetitive Surge Current
30A
Reverse Voltage
1.1kV
Max Forward Surge Current (Ifsm)
30A
Recovery Time
75 ns
Max Junction Temperature (Tj)
175°C
Height
3.6mm
Length
4.2mm
Width
3.6mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BYV26E-TAP Overview
The reverse voltage should be 1.1kV.In this device, there is an average rectified current of 1A volts.Forward current may not exceed 1A.1A is its maximum current rating, which is the maximum current that a fuse can handle without deteriorating.This is the maximum amount of 30A surge current that can be used.Output current is maximal at 1A.As the data chart indicates, the peak reverse is 5μA.

BYV26E-TAP Features
an average rectified current of 1A volts
a current rating of 1A
1A is the maximum value
the peak reverse is 5μA

BYV26E-TAP Applications
There are a lot of Vishay Semiconductor Diodes Division
BYV26E-TAP applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BYV26E-TAP More Descriptions

DIODE AVALANCHE 1000V 1A SOD57 / Rectifier Diode Switching 1KV 1A 75ns 2-Pin SOD-57 Ammo
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AP
VISHAY BYV26E-TAPFast / Ultrafast Diode, Single, 1 kV, 1 A, 2.5 V, 75 ns, 30 A
BYV26E Series 1000 V 1 A Ultra-Fast Avalanche Sinterglass Diode - SOD-57
DIODE, ULTRAFAST, 1A, 1000V; Diode Type:Soft Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1kV; Forward Current If(AV):1A; Forward Voltage VF Max:2.5V; Reverse Recovery Time trr Max:75ns; Forward Surge Current Ifsm Max:30A; Operating Temperature Range:-55°C to 175°C; Diode Case Style:SOD-57; No. of Pins:2; Current Ifsm:30A; External Diameter:3.8mm; External Length / Height:4.6mm; Forward Voltage:2.5V; Junction Temperature Tj Max:175°C; Package / Case:SOD-57; Reverse Recovery Time trr Typ:75ns; Termination Type:Axial Leaded

Product Comparison

The three parts on the right have similar specifications to BYV26E-TAP.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

HTS Code

Subcategory

Terminal Form

Current Rating

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Surge Current

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Reverse Voltage

Max Forward Surge Current (Ifsm)

Recovery Time

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Additional Feature

Capacitance @ Vr, F

Diameter

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Application

Number of Phases

View Compare
BYV26E-TAP

Vishay Semiconductor Diodes Division

12 Weeks

Silver, Tin

Through Hole

Through Hole

SOD-57, Axial

2

SILICON

Tape & Box (TB)

2006

e2

yes

Active

1 (Unlimited)

2

EAR99

Tin/Silver (Sn96.5Ag3.5)

175°C

-55°C

8541.10.00.80

Rectifier Diodes

WIRE

1A

BYV26E

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

5μA @ 1000V

2.5V @ 1A

ISOLATED

1A

-55°C~175°C

30A

1A

1000V

2.5V

1kV

1A

75 ns

5μA

1kV

30A

1.1kV

30A

75 ns

175°C

3.6mm

4.2mm

3.6mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
BYV26EGP-E3/73

Vishay Semiconductor Diodes Division

22 Weeks

Tin

Through Hole

Through Hole

DO-204AC, DO-15, Axial

2

SILICON

Tape & Box (TB)

2016

e3

yes

Active

1 (Unlimited)

2

EAR99

-

175°C

-65°C

8541.10.00.80

Rectifier Diodes

WIRE

-

BYV26EGP

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

5μA @ 1000V

2.5V @ 1A

ISOLATED

1A

-65°C~175°C

30A

1A

1000V

2.5V

1kV

1A

75 ns

5μA

1kV

30A

1kV

-

75 ns

-

7.6mm

7.6mm

-

-

No

ROHS3 Compliant

Lead Free

SUPERECTIFIER®

FREE WHEELING DIODE, HIGH RELIABILITY

15pF @ 4V 1MHz

3.6mm

-

-

-

-

-

-

BYV26E-TAP vs BYV26EGP-E3/73
BYV29-400-E3/45

Vishay Semiconductor Diodes Division

18 Weeks

Tin

Through Hole

Through Hole

TO-220-2

2

SILICON

Tube

2011

e3

yes

Active

1 (Unlimited)

2

EAR99

-

150°C

-40°C

8541.10.00.80

Rectifier Diodes

-

-

BYV29-400

3

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

10μA @ 400V

1.25V @ 8A

CATHODE

8A

-40°C~150°C

110A

8A

-

1.4V

400V

8A

50 ns

10μA

400V

110A

400V

-

50 ns

-

-

-

-

-

-

ROHS3 Compliant

-

-

FREE WHEELING DIODE

-

-

NOT SPECIFIED

unknown

NOT SPECIFIED

Not Qualified

EFFICIENCY

1

BYV26E-TAP vs BYV29-400-E3/45
BYV27-150-TR

Vishay Semiconductor Diodes Division

12 Weeks

-

Through Hole

Through Hole

SOD-57, Axial

2

SILICON

Tape & Reel (TR)

2011

e2

yes

Active

1 (Unlimited)

2

EAR99

Tin/Silver (Sn/Ag)

175°C

-55°C

8541.10.00.80

Rectifier Diodes

WIRE

2A

-

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Avalanche

1μA @ 165V

1.07V @ 3A

ISOLATED

2A

-55°C~175°C

50A

2A

-

1.07V

165V

2A

25 ns

1μA

150V

50A

150V

-

25 ns

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

LOW LEAKAGE CURRENT

-

-

-

-

-

-

ULTRA FAST RECOVERY

1

BYV26E-TAP vs BYV27-150-TR