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BYT54D-TAP

Vishay Semiconductor Diodes Division BYT54D-TAP

Part Number:
BYT54D-TAP
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
2427080-BYT54D-TAP
Description:
DIODE AVALANCHE 200V 1.25A SOD57
ECAD Model:
Datasheet:
BYT54D-TAP

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Specifications
Vishay Semiconductor Diodes Division BYT54D-TAP technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BYT54D-TAP.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Silver, Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    SOD-57, Axial
  • Diode Element Material
    SILICON
  • Packaging
    Tape & Box (TB)
  • Published
    2011
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver (Sn96.5Ag3.5)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    E-LALF-W2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Avalanche
  • Current - Reverse Leakage @ Vr
    5μA @ 200V
  • Voltage - Forward (Vf) (Max) @ If
    1.5V @ 1A
  • Case Connection
    ISOLATED
  • Forward Current
    1.25A
  • Operating Temperature - Junction
    -55°C~175°C
  • Max Surge Current
    30A
  • Output Current-Max
    0.75A
  • Max Reverse Voltage (DC)
    200V
  • Average Rectified Current
    1.25A
  • Reverse Recovery Time
    100 ns
  • Peak Reverse Current
    5μA
  • Max Repetitive Reverse Voltage (Vrrm)
    200V
  • Peak Non-Repetitive Surge Current
    30A
  • Reverse Voltage
    200V
  • Recovery Time
    100 ns
  • RoHS Status
    ROHS3 Compliant
Description
BYT54D-TAP Overview
Reverse voltages of 200V are reasonable.A rectified current of 1.25A volts is averaged for this device.A value of 1.25A is the maximum forward current that can be allowed.30A is the maximum value of surge current.Phase diode rectifier is possible to produce a maximum output current by setting the output current to 0.75A.As indicated by the data chart in the datasheets, the peak reverse is 5μA.

BYT54D-TAP Features
an average rectified current of 1.25A volts
0.75A is the maximum value
the peak reverse is 5μA


BYT54D-TAP Applications
There are a lot of Vishay Semiconductor Diodes Division
BYT54D-TAP applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
BYT54D-TAP More Descriptions
Fast Recovery Power Rectifier; Diode Configuration:Single; Reel Quantity:5000 Rohs Compliant: Yes |Vishay BYT54D-TAP
Diode Switching 200V 1.25A 2-Pin SOD-57 Ammo
DIODE AVALANCHE 200V 1.25A SOD57
Avalanche 1 Phase 1 Element 0.75A 200V V(RRM) Silicon
DIODE AVALANCHE 50V 1.9A SOD57
Product Comparison
The three parts on the right have similar specifications to BYT54D-TAP.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    HTS Code
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Output Current-Max
    Max Reverse Voltage (DC)
    Average Rectified Current
    Reverse Recovery Time
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Peak Non-Repetitive Surge Current
    Reverse Voltage
    Recovery Time
    RoHS Status
    Number of Pins
    Current Rating
    Voltage - DC Reverse (Vr) (Max)
    Forward Voltage
    Max Forward Surge Current (Ifsm)
    REACH SVHC
    Lead Free
    Pin Count
    Application
    Number of Phases
    Radiation Hardening
    View Compare
  • BYT54D-TAP
    BYT54D-TAP
    Vishay Semiconductor Diodes Division
    12 Weeks
    Silver, Tin
    Through Hole
    Through Hole
    SOD-57, Axial
    SILICON
    Tape & Box (TB)
    2011
    e2
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Silver (Sn96.5Ag3.5)
    175°C
    -55°C
    8541.10.00.80
    Rectifier Diodes
    WIRE
    260
    30
    E-LALF-W2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Avalanche
    5μA @ 200V
    1.5V @ 1A
    ISOLATED
    1.25A
    -55°C~175°C
    30A
    0.75A
    200V
    1.25A
    100 ns
    5μA
    200V
    30A
    200V
    100 ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BYT54M-TR
    BYT54M-TR
    Vishay Semiconductor Diodes Division
    12 Weeks
    Silver, Tin
    Through Hole
    Through Hole
    SOD-57, Axial
    SILICON
    Tape & Reel (TR)
    2008
    e2
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Silver (Sn96.5Ag3.5)
    165°C
    -55°C
    8541.10.00.80
    Rectifier Diodes
    WIRE
    260
    30
    -
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Avalanche
    5μA @ 1000V
    1.5V @ 1A
    ISOLATED
    1.25A
    -55°C~175°C
    30A
    0.75A
    1kV
    1.25A
    100 ns
    5μA
    1kV
    30A
    1kV
    100 ns
    ROHS3 Compliant
    2
    1.25A
    1000V
    1.5V
    30A
    Unknown
    Lead Free
    -
    -
    -
    -
    BYT54D-TAP vs BYT54M-TR
  • BYT56D-TR
    BYT56D-TR
    Vishay Semiconductor Diodes Division
    17 Weeks
    -
    Through Hole
    Through Hole
    SOD-64, Axial
    SILICON
    Tape & Reel (TR)
    2012
    e2
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Silver (Sn96.5Ag3.5)
    175°C
    -55°C
    8541.10.00.80
    Rectifier Diodes
    WIRE
    260
    30
    E-LALF-W2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Avalanche
    5μA @ 200V
    1.4V @ 3A
    ISOLATED
    3A
    -55°C~175°C
    80A
    1.5A
    200V
    3A
    100 ns
    5μA
    200V
    80A
    200V
    100 ns
    ROHS3 Compliant
    -
    3A
    -
    1.4V
    -
    -
    -
    2
    FAST SOFT RECOVERY
    1
    No
    BYT54D-TAP vs BYT56D-TR
  • BYT56G-TAP
    BYT56G-TAP
    Vishay Semiconductor Diodes Division
    17 Weeks
    Silver, Tin
    Through Hole
    Through Hole
    SOD-64, Axial
    SILICON
    Tape & Box (TB)
    2012
    e2
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Silver (Sn96.5Ag3.5)
    175°C
    -55°C
    8541.10.00.80
    Rectifier Diodes
    WIRE
    260
    30
    -
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Avalanche
    5μA @ 400V
    1.4V @ 3A
    ISOLATED
    3A
    -55°C~175°C
    80A
    1.5A
    400V
    3A
    100 ns
    5μA
    400V
    80A
    400V
    100 ns
    ROHS3 Compliant
    2
    3A
    -
    1.4V
    -
    -
    -
    2
    FAST SOFT RECOVERY
    1
    No
    BYT54D-TAP vs BYT56G-TAP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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