Vishay Semiconductor Diodes Division BYG10GHE3/TR
- Part Number:
- BYG10GHE3/TR
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2427459-BYG10GHE3/TR
- Description:
- DIODE AVALANCHE 400V 1.5A
- Datasheet:
- BYG10GHE3/TR
Vishay Semiconductor Diodes Division BYG10GHE3/TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BYG10GHE3/TR.
- Voltage - Forward (Vf) (Max) @ If:1.15V @ 1.5A
- Voltage - DC Reverse (Vr) (Max):400V
- Supplier Device Package:DO-214AC (SMA)
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Series:-
- Reverse Recovery Time (trr):4µs
- Packaging:Tape & Reel (TR)
- Package / Case:DO-214AC, SMA
- Operating Temperature - Junction:-55°C ~ 150°C
- Mounting Type:Surface Mount
- Diode Type:Avalanche
- Current - Reverse Leakage @ Vr:1µA @ 400V
- Current - Average Rectified (Io):1.5A
- Capacitance @ Vr, F:-
part#BYG10GHE3/TR, Manufacturer:Vishay / Semiconductor - Diodes Division is available at ventronchip.com, see description of BYG10GHE3/TR as below .use the request quote form to request BYG10GHE3/TR price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for BYG10GHE3/TR depending on the quantity required, availability and warehouse location.
BYG10GHE3/TR More Descriptions
DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode
Diode Switching 400V 1.5A 2-Pin SMA T/R
DIODE 1.5A 400V STD AVALANCH SMA
Rectifiers 400 Volt 1.5 Amp Glass Passivated
Diode; Diode Type:Avalanche; Repetitive Reverse Voltage Max Vrrm:400V; Forward Current If(AV):1.5A; Forward Voltage VF Max:1.15V; Reverse Recovery Time trr Max:4µs; Forward Surge Current Ifsm Max:30A ;RoHS Compliant: Yes
Diode Switching 400V 1.5A 2-Pin SMA T/R
DIODE 1.5A 400V STD AVALANCH SMA
Rectifiers 400 Volt 1.5 Amp Glass Passivated
Diode; Diode Type:Avalanche; Repetitive Reverse Voltage Max Vrrm:400V; Forward Current If(AV):1.5A; Forward Voltage VF Max:1.15V; Reverse Recovery Time trr Max:4µs; Forward Surge Current Ifsm Max:30A ;RoHS Compliant: Yes
The three parts on the right have similar specifications to BYG10GHE3/TR.
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ImagePart NumberManufacturerVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Reverse Recovery Time (trr):Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io):Capacitance @ Vr, F:View Compare
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BYG10GHE3/TR1.15V @ 1.5A400VDO-214AC (SMA)Standard Recovery >500ns, > 200mA (Io)-4µsTape & Reel (TR)DO-214AC, SMA-55°C ~ 150°CSurface MountAvalanche1µA @ 400V1.5A--
-
1.15V @ 1.5A1000V (1kV)DO-214AC (SMA)Standard Recovery >500ns, > 200mA (Io)-4µsTape & Reel (TR)DO-214AC, SMA-55°C ~ 150°CSurface MountAvalanche1µA @ 1000V1.5A-
-
1.15V @ 1.5A800VDO-214AC (SMA)Standard Recovery >500ns, > 200mA (Io)Automotive, AEC-Q1014µsTape & Reel (TR)DO-214AC, SMA-55°C ~ 150°CSurface MountAvalanche1µA @ 800V1.5A-
-
1.15V @ 1.5A200VDO-214AC (SMA)Standard Recovery >500ns, > 200mA (Io)Automotive, AEC-Q1014µsTape & Reel (TR)DO-214AC, SMA-55°C ~ 150°CSurface MountAvalanche1µA @ 200V1.5A-
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