SIEMENS BUP313D

Name: BUP313D
Brand: SIEMENS
SKU: 5633581-BUP313D
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUP313D

Manufacturer:: SIEMENS

Ventron No:: 5633581-BUP313D

Description:: IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-u

ECAD Model:

Datasheet:: BUP313D

Specifications

SIEMENS BUP313D technical specifications, attributes, parameters and parts with similar specifications to SIEMENS BUP313D.

Surface Mount
NO
Number of Terminals
3
Transistor Element Material
SILICON
JESD-609 Code
e3
Terminal Finish
MATTE TIN
Additional Feature
HIGH SPEED
Subcategory
Insulated Gate BIP Transistors
Terminal Position
SINGLE
Terminal Form
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Rise Time-Max
70ns
Configuration
SINGLE WITH BUILT-IN DIODE
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-218
Power Dissipation-Max (Abs)
200W
Turn On Time
70 ns
Collector Current-Max (IC)
32A
Turn Off Time-Nom (toff)
400 ns
Collector-Emitter Voltage-Max
1200V
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
95ns
RoHS Status
RoHS Compliant

Description

BUP313D Overview
This product is manufactured by SIEMENS and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet BUP313D or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BUP313D. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

BUP313D More Descriptions

32 A 1200 V N-CHANNEL IGBT TO-218
; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:32A; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:200W; Package/Case:SOT-93 ;RoHS Compliant: Yes
IGBT, TO-218; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:32A; Voltage, Vce Sat Max:3.2V; Power Dissipation:200W; Case Style:TO-218AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:15A; Current, Icm Pulsed:64A; Current, If AV:18A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1G, 2C, 3E; Power, Pd:200W; Power, Ptot:200W; Temperature, Current:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Rise:45ns; Transistors, No. of:1

Certification