BUJ303A,127

WeEn Semiconductors BUJ303A,127

Part Number:
BUJ303A,127
Manufacturer:
WeEn Semiconductors
Ventron No:
2465409-BUJ303A,127
Description:
TRANS NPN 500V 5A TO220AB
ECAD Model:
Datasheet:
BUJ303A,127

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Specifications
WeEn Semiconductors BUJ303A,127 technical specifications, attributes, parameters and parts with similar specifications to WeEn Semiconductors BUJ303A,127.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Position
    SINGLE
  • Reference Standard
    IEC-60134
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Power - Max
    100W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    14 @ 500mA 5V
  • Current - Collector Cutoff (Max)
    100μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 600mA, 3A
  • Voltage - Collector Emitter Breakdown (Max)
    500V
  • Current - Collector (Ic) (Max)
    5A
  • RoHS Status
    RoHS Compliant
Description
BUJ303A,127 Overview
In this device, the DC current gain is 14 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 3A.The device exhibits a collector-emitter breakdown at 500V.

BUJ303A,127 Features
the DC current gain for this device is 14 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 600mA, 3A


BUJ303A,127 Applications
There are a lot of WeEn Semiconductors
BUJ303A,127 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BUJ303A,127 More Descriptions
BUJ303A Series 500 V 5 A Through Hole NPN Power Transistor - TO-220AB
Trans GP BJT NPN 500V 5A 3-Pin(3 Tab) TO-220AB Tube
1mA 500V 100W 5A 25@500mA,5V 350mV@3A,600mA NPN 150¡æ@(Tj) SOT-78 Bipolar Transistors - BJT ROHS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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