WeEn Semiconductors BUJ303A,127
- Part Number:
- BUJ303A,127
- Manufacturer:
- WeEn Semiconductors
- Ventron No:
- 2465409-BUJ303A,127
- Description:
- TRANS NPN 500V 5A TO220AB
- Datasheet:
- BUJ303A,127
WeEn Semiconductors BUJ303A,127 technical specifications, attributes, parameters and parts with similar specifications to WeEn Semiconductors BUJ303A,127.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal PositionSINGLE
- Reference StandardIEC-60134
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max100W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 500mA 5V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 3A
- Voltage - Collector Emitter Breakdown (Max)500V
- Current - Collector (Ic) (Max)5A
- RoHS StatusRoHS Compliant
BUJ303A,127 Overview
In this device, the DC current gain is 14 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 3A.The device exhibits a collector-emitter breakdown at 500V.
BUJ303A,127 Features
the DC current gain for this device is 14 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 600mA, 3A
BUJ303A,127 Applications
There are a lot of WeEn Semiconductors
BUJ303A,127 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 14 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 3A.The device exhibits a collector-emitter breakdown at 500V.
BUJ303A,127 Features
the DC current gain for this device is 14 @ 500mA 5V
the vce saturation(Max) is 1.5V @ 600mA, 3A
BUJ303A,127 Applications
There are a lot of WeEn Semiconductors
BUJ303A,127 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUJ303A,127 More Descriptions
BUJ303A Series 500 V 5 A Through Hole NPN Power Transistor - TO-220AB
Trans GP BJT NPN 500V 5A 3-Pin(3 Tab) TO-220AB Tube
1mA 500V 100W 5A 25@500mA,5V 350mV@3A,600mA NPN 150¡æ@(Tj) SOT-78 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 500V 5A 3-Pin(3 Tab) TO-220AB Tube
1mA 500V 100W 5A 25@500mA,5V 350mV@3A,600mA NPN 150¡æ@(Tj) SOT-78 Bipolar Transistors - BJT ROHS
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