WeEn Semiconductors BUJ100LR,126
- Part Number:
- BUJ100LR,126
- Manufacturer:
- WeEn Semiconductors
- Ventron No:
- 2465006-BUJ100LR,126
- Description:
- TRANS NPN 400V 1A TO-92
- Datasheet:
- BUJ100LR,126
WeEn Semiconductors BUJ100LR,126 technical specifications, attributes, parameters and parts with similar specifications to WeEn Semiconductors BUJ100LR,126.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Base Part NumberBUJ100
- Power - Max2.1W
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 400mA 5V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic1.5V @ 250mA, 750mA
- Voltage - Collector Emitter Breakdown (Max)400V
- Current - Collector (Ic) (Max)1A
- RoHS StatusRoHS Compliant
BUJ100LR,126 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 400mA 5V.When VCE saturation is 1.5V @ 250mA, 750mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 400V maximal voltage - Collector Emitter Breakdown.
BUJ100LR,126 Features
the DC current gain for this device is 10 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 250mA, 750mA
BUJ100LR,126 Applications
There are a lot of WeEn Semiconductors
BUJ100LR,126 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 400mA 5V.When VCE saturation is 1.5V @ 250mA, 750mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 400V maximal voltage - Collector Emitter Breakdown.
BUJ100LR,126 Features
the DC current gain for this device is 10 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 250mA, 750mA
BUJ100LR,126 Applications
There are a lot of WeEn Semiconductors
BUJ100LR,126 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUJ100LR,126 More Descriptions
400V 2.1W 1A 7.5@800mA,5V 400mV@750mA,250mA NPN 150¡æ@(Tj) SOT-54 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 400V 1A 2100mW 3-Pin SPT Ammo
Npn Power Transistor, 400 V, 1 A, 3-To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:400V; Continuous Collector Current:1A; Power Dissipation:2W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Ween Semiconductors BUJ100LR,126
Trans GP BJT NPN 400V 1A 2100mW 3-Pin SPT Ammo
Npn Power Transistor, 400 V, 1 A, 3-To-92; Transistor Polarity:Npn; Collector Emitter Voltage Max:400V; Continuous Collector Current:1A; Power Dissipation:2W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Ween Semiconductors BUJ100LR,126
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