Vishay Semiconductor Diodes Division BU12105S-M3/45

Name: BU12105S-M3/45
Brand: Vishay Semiconductor Diodes Division
SKU: 3062576-BU12105S-M3/45
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BU12105S-M3/45

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 3062576-BU12105S-M3/45

Description:: RECTIFIER BRIDGE 1000V 12A BU-5S

ECAD Model:

Datasheet:: BU12105S-M3/45

Specifications

Vishay Semiconductor Diodes Division BU12105S-M3/45 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BU12105S-M3/45.

Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
4-ESIP, BU-5S
Number of Pins
4
Diode Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2012
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
Matte Tin (Sn)
Additional Feature
UL RECOGNIZED
Technology
Standard
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
Number of Elements
4
Diode Type
Single Phase
Current - Reverse Leakage @ Vr
5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If
1.05V @ 6A
Case Connection
ISOLATED
Forward Current
3.4A
Current - Average Rectified (Io)
12A
Number of Phases
1
Peak Reverse Current
5μA
Max Repetitive Reverse Voltage (Vrrm)
1kV
Rep Pk Reverse Voltage-Max
1000V
Max Forward Surge Current (Ifsm)
150A
RoHS Status
ROHS3 Compliant

Description

BU12105S-M3/45 Overview
The number of pins is 4.There is no forward voltage applied to this device.A 4-ESIP, BU-5S package electronic component is basically a type of electronic component.Mounting method of the device is Through Hole.Keeping the temperature at -55°C~150°C TJ ensures normal operation.Powering this device requires a peak reverse voltage of 5μA.

BU12105S-M3/45 Features
4 pin count
3.4A forward voltage
forward voltage of 3.4A
4-ESIP, BU-5S package
operating at a temperature of -55°C~150°C TJ
peak reverse voltage of 5μA
a reverse voltage peak of 5μA

BU12105S-M3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division
BU12105S-M3/45 applications of bridge rectifiers.

High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs

BU12105S-M3/45 More Descriptions

Diode Rectifier Bridge Single 1KV 3.4A 4-Pin Case BU Tube
BRIDGE RECT 1P 1KV 12A BU-5S

Product Comparison

The three parts on the right have similar specifications to BU12105S-M3/45.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Current - Average Rectified (Io)

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Rep Pk Reverse Voltage-Max

Max Forward Surge Current (Ifsm)

RoHS Status

Contact Plating

Pbfree Code

Subcategory

Qualification Status

Max Reverse Leakage Current

Max Surge Current

Forward Voltage

Peak Non-Repetitive Surge Current

Height

Length

Width

Element Configuration

Average Rectified Current

Lead Free

View Compare
BU12105S-M3/45

Vishay Semiconductor Diodes Division

10 Weeks

Through Hole

Through Hole

4-ESIP, BU-5S

4

SILICON

-55°C~150°C TJ

Tube

2012

e3

Active

1 (Unlimited)

4

Matte Tin (Sn)

UL RECOGNIZED

Standard

NOT SPECIFIED

unknown

NOT SPECIFIED

4

4

Single Phase

5μA @ 1000V

1.05V @ 6A

ISOLATED

3.4A

12A

1

5μA

1kV

1000V

150A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BU1210-E3/51

Vishay Semiconductor Diodes Division

10 Weeks

Through Hole

Through Hole

4-SIP, BU

4

SILICON

-55°C~150°C TJ

Bulk

2012

e3

Active

1 (Unlimited)

4

-

UL RECOGNIZED

Standard

NOT SPECIFIED

unknown

NOT SPECIFIED

4

1

Single Phase

5μA @ 1000V

1.05V @ 6A

ISOLATED

3.4A

-

1

5μA

1kV

-

150A

ROHS3 Compliant

Tin

yes

Bridge Rectifier Diodes

Not Qualified

5μA

150A

1.05V

150A

18.8mm

22.3mm

4.1mm

-

-

-

BU12105S-M3/45 vs BU1210-E3/51
BU12085S-E3/45

Vishay Semiconductor Diodes Division

10 Weeks

Through Hole

Through Hole

4-ESIP, BU-5S

4

SILICON

-55°C~150°C TJ

Tube

2008

e3

Active

1 (Unlimited)

4

-

UL RECOGNIZED

Standard

NOT SPECIFIED

unknown

NOT SPECIFIED

4

1

Single Phase

5μA @ 800V

1.05V @ 6A

ISOLATED

3.4A

-

1

5μA

800V

-

150A

ROHS3 Compliant

Tin

yes

Bridge Rectifier Diodes

Not Qualified

5μA

150A

1.05V

150A

18.8mm

22.3mm

4.1mm

Single

12A

Lead Free

BU12105S-M3/45 vs BU12085S-E3/45
BU12085S-M3/45

Vishay Semiconductor Diodes Division

10 Weeks

Through Hole

Through Hole

4-ESIP, BU-5S

4

SILICON

-55°C~150°C TJ

Tube

2012

e3

Active

1 (Unlimited)

4

Matte Tin (Sn)

UL RECOGNIZED

Standard

NOT SPECIFIED

unknown

NOT SPECIFIED

4

4

Single Phase

5μA @ 800V

1.05V @ 6A

ISOLATED

3.4A

12A

1

5μA

800V

-

150A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BU12105S-M3/45 vs BU12085S-M3/45