Vishay Semiconductor Diodes Division BU1208-M3/45

Name: BU1208-M3/45
Brand: Vishay Semiconductor Diodes Division
SKU: 3062522-BU1208-M3/45
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BU1208-M3/45

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 3062522-BU1208-M3/45

Description:: RECTIFIER BRIDGE 800V 12A BU

ECAD Model:

Datasheet:: BU1208-M3/45

Specifications

Vishay Semiconductor Diodes Division BU1208-M3/45 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division BU1208-M3/45.

Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
4-SIP, BU
Number of Pins
4
Diode Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2012
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
Matte Tin (Sn)
Additional Feature
UL RECOGNIZED
Technology
Standard
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
Number of Elements
4
Diode Type
Single Phase
Current - Reverse Leakage @ Vr
5μA @ 800V
Voltage - Forward (Vf) (Max) @ If
1.05V @ 6A
Case Connection
ISOLATED
Forward Current
3.4A
Current - Average Rectified (Io)
12A
Number of Phases
1
Peak Reverse Current
5μA
Max Repetitive Reverse Voltage (Vrrm)
800V
Max Forward Surge Current (Ifsm)
150A
RoHS Status
ROHS3 Compliant

Description

BU1208-M3/45 Overview
A total of 4 pins are present on it.The device operates at 3.4A forward voltage.Basically, it's an electronic component that comes in a 4-SIP, BU package.This device is mounted in the Through Hole position.Keeping it at -55°C~150°C TJ ensures its normal operation.In order to power this device, there is a reverse voltage peak of 5μA.

BU1208-M3/45 Features
4 pin count
3.4A forward voltage
forward voltage of 3.4A
4-SIP, BU package
operating at a temperature of -55°C~150°C TJ
peak reverse voltage of 5μA
a reverse voltage peak of 5μA

BU1208-M3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division
BU1208-M3/45 applications of bridge rectifiers.

Military and other high-reliability applications
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives

BU1208-M3/45 More Descriptions

Diode Rectifier Bridge Single 800V 3.4A 4-Pin Case BU Tube
12A,800V,STD,INLINE POWER BRIDGE
BRIDGE RECT 1P 800V 12A BU
12A 800V BR GBU

Product Comparison

The three parts on the right have similar specifications to BU1208-M3/45.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Current - Average Rectified (Io)

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Max Forward Surge Current (Ifsm)

RoHS Status

Element Configuration

Radiation Hardening

Contact Plating

Pbfree Code

Subcategory

Qualification Status

Max Reverse Leakage Current

Max Surge Current

Forward Voltage

Average Rectified Current

Peak Non-Repetitive Surge Current

Height

Length

Width

Lead Free

View Compare
BU1208-M3/45

Vishay Semiconductor Diodes Division

10 Weeks

Through Hole

Through Hole

4-SIP, BU

4

SILICON

-55°C~150°C TJ

Tube

2012

e3

Active

1 (Unlimited)

4

Matte Tin (Sn)

UL RECOGNIZED

Standard

NOT SPECIFIED

unknown

NOT SPECIFIED

4

4

Single Phase

5μA @ 800V

1.05V @ 6A

ISOLATED

3.4A

12A

1

5μA

800V

150A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BU1206-M3/45

Vishay Semiconductor Diodes Division

10 Weeks

Through Hole

Through Hole

4-SIP, BU

4

SILICON

-55°C~150°C TJ

Tube

2012

e3

Active

1 (Unlimited)

4

Matte Tin (Sn)

UL RECOGNIZED

Standard

-

-

-

4

4

Single Phase

5μA @ 600V

1.05V @ 6A

ISOLATED

3.4A

12A

1

5μA

600V

-

ROHS3 Compliant

Single

No

-

-

-

-

-

-

-

-

-

-

-

-

-

BU1208-M3/45 vs BU1206-M3/45
BU12085S-E3/45

Vishay Semiconductor Diodes Division

10 Weeks

Through Hole

Through Hole

4-ESIP, BU-5S

4

SILICON

-55°C~150°C TJ

Tube

2008

e3

Active

1 (Unlimited)

4

-

UL RECOGNIZED

Standard

NOT SPECIFIED

unknown

NOT SPECIFIED

4

1

Single Phase

5μA @ 800V

1.05V @ 6A

ISOLATED

3.4A

-

1

5μA

800V

150A

ROHS3 Compliant

Single

-

Tin

yes

Bridge Rectifier Diodes

Not Qualified

5μA

150A

1.05V

12A

150A

18.8mm

22.3mm

4.1mm

Lead Free

BU1208-M3/45 vs BU12085S-E3/45
BU12085S-M3/45

Vishay Semiconductor Diodes Division

10 Weeks

Through Hole

Through Hole

4-ESIP, BU-5S

4

SILICON

-55°C~150°C TJ

Tube

2012

e3

Active

1 (Unlimited)

4

Matte Tin (Sn)

UL RECOGNIZED

Standard

NOT SPECIFIED

unknown

NOT SPECIFIED

4

4

Single Phase

5μA @ 800V

1.05V @ 6A

ISOLATED

3.4A

12A

1

5μA

800V

150A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BU1208-M3/45 vs BU12085S-M3/45