BSP129

SIEMENS BSP129

Part Number:
BSP129
Manufacturer:
SIEMENS
Ventron No:
5632922-BSP129
Description:
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
ECAD Model:
Datasheet:
BSP129

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Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy BSP129.
BSP129 More Descriptions
Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3 Tab) SOT-223 T/R
MOSFET Operating temperature: -55... 150 °C Drive: NL Housing type: SOT-223 Polarity: N Variants: Depletion mode Power dissipation: 1.7 W
Depletion Mode Mosfet, 240V, 120Ma, Sot-223; Channel Type:N Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:120Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:1.7W Rohs Compliant: Yes |Infineon BSP129
MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 120mA; Drain Source Voltage Vds: 240V; On Resistance Rds(on): 20ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 120mA; Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 1.7W; Pulse Current Idm: 480mA; SMD Marking: BSP129; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 240V; Voltage Vgs Max: -1.4V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 700mV
Product Comparison
The three parts on the right have similar specifications to BSP129.
  • Image
    Part Number
    Manufacturer
    Surface Mount
    Number of Terminals
    Transistor Element Material
    ECCN Code
    Additional Feature
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    FET Technology
    Power Dissipation-Max (Abs)
    Reference Standard
    View Compare
  • BSP129
    BSP129
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSP170
    YES
    4
    SILICON
    EAR99
    AVALANCHE RATED
    8541.29.00.95
    Other Transistors
    DUAL
    GULL WING
    compliant
    4
    R-PDSO-G4
    Not Qualified
    150°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    P-CHANNEL
    1.7A
    0.35Ohm
    6.8A
    60V
    8 mJ
    METAL-OXIDE SEMICONDUCTOR
    1.8W
    -
  • BSP17
    YES
    4
    SILICON
    EAR99
    AVALANCHE RATED
    8541.29.00.95
    FET General Purpose Power
    DUAL
    GULL WING
    compliant
    4
    R-PDSO-G4
    Not Qualified
    150°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    N-CHANNEL
    2.9A
    0.1Ohm
    12.8A
    50V
    6 mJ
    METAL-OXIDE SEMICONDUCTOR
    1.5W
    -
  • BSP123
    YES
    4
    SILICON
    EAR99
    -
    8541.29.00.75
    -
    DUAL
    GULL WING
    -
    4
    R-PDSO-G4
    Not Qualified
    -
    1
    SINGLE
    ENHANCEMENT MODE
    DRAIN
    N-CHANNEL
    0.38A
    6Ohm
    -
    100V
    -
    METAL-OXIDE SEMICONDUCTOR
    -
    CECC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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