Nexperia USA Inc. BSH108,215

Name: BSH108,215
Brand: Nexperia USA Inc.
SKU: 2479772-BSH108,215
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSH108,215

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2479772-BSH108,215

Description:: MOSFET N-CH 30V 1.9A SOT23

ECAD Model:

Datasheet:: BSH108,215

Specifications

Nexperia USA Inc. BSH108,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSH108,215.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
Published
1997
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
HTS Code
8541.29.00.75
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
830mW Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
830mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
120m Ω @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.9A Tc
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
1.9A
Drain-source On Resistance-Max
0.14Ohm
RoHS Status
ROHS3 Compliant

Description

BSH108,215 Overview
The maximum input capacitance of this device is 190pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.9A.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.

BSH108,215 Features
a continuous drain current (ID) of 1.9A
a 30V drain to source voltage (Vdss)

BSH108,215 Applications
There are a lot of Nexperia USA Inc.
BSH108,215 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

BSH108,215 More Descriptions

BSH108 Series 30 V 120 mOhm 0.83 W N-Channel Enhancement Mode Transistor -SOT-23
Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET N-CH 30V 1.9A SOT23; Transistor Polarity:N Channel; On State Resistance:120mohm; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-23; Case Style:SOT-23; Cont Current Id:1A; Termination Type:SMD; ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 102 / Gate-Source Voltage V = 20 / Fall Time ns = 26 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 830

Product Comparison

The three parts on the right have similar specifications to BSH108,215.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Technology

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain-source On Resistance-Max

RoHS Status

Subcategory

Operating Temperature (Max)

Polarity/Channel Type

Drain Current-Max (Abs) (ID)

FET Technology

Power Dissipation-Max (Abs)

Mount

Insulation Material

Weight

Body Material

Termination

Max Operating Temperature

Min Operating Temperature

Color

Voltage - Rated

Orientation

Wire Gauge

Wire Gauge (Max)

Wire Gauge (Min)

Body Plating

Terminal and Terminal Block Type

Insulation

Terminal Type

Wire/Cable Diameter

Number of Wire Entries

Terminal Gender

Length

Radiation Hardening

View Compare
BSH108,215

Nexperia USA Inc.

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

TrenchMOS™

1997

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

LOGIC LEVEL COMPATIBLE

8541.29.00.75

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

830mW Tc

ENHANCEMENT MODE

830mW

N-Channel

SWITCHING

120m Ω @ 1A, 10V

2V @ 1mA

190pF @ 10V

1.9A Tc

10nC @ 10V

30V

5V 10V

±20V

1.9A

0.14Ohm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSH111

NXP

-

-

-

YES

-

-

-

-

-

-

e3

-

1 (Unlimited)

-

-

Matte Tin (Sn)

-

-

-

-

-

-

-

Single

-

ENHANCEMENT MODE

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

FET General Purpose Power

150°C

N-CHANNEL

0.335A

METAL-OXIDE SEMICONDUCTOR

0.83W

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSH108,215 vs BSH111
BSH103

NXP

-

-

SOT23-3

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSH108,215 vs BSH103
BSH18-Q

Panduit Corp

4 Weeks

-

-

-

-

-

-

Bulk

Pan-Term®

2008

-

Active

Not Applicable

-

EAR99

-

-

8536.90.40.00

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

Adhesive

Polyolefin

49.895161g

Copper

Crimp

110°C

-55°C

Red

600V

Straight

18-22 AWG

22 AWG

18 AWG

Tin

WIRE TERMINAL

Fully Insulated Heat Shrink

Butt Splice, Inline, Individual Openings

500 μm

2

FEMALE

36.83mm

No

BSH108,215 vs BSH18-Q