Infineon Technologies BSC072N03LD G

Name: BSC072N03LD G
Brand: Infineon Technologies
SKU: 2473531-BSC072N03LD G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC072N03LD G

Manufacturer:: Infineon Technologies

Ventron No:: 2473531-BSC072N03LD G

Description:: MOSFET 2N-CH 30V 11.5A 8TDSON

ECAD Model:

Datasheet:: BSC072N03LD G

Specifications

Infineon Technologies BSC072N03LD G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC072N03LD G.

Surface Mount
YES
Number of Terminals
6
Transistor Element Material
SILICON
JESD-609 Code
e3
Pbfree Code
icon-pbfree yes
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
R-PDSO-F6
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (Abs) (ID)
20A
Drain-source On Resistance-Max
0.0094Ohm
Pulsed Drain Current-Max (IDM)
80A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
90 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
57W
RoHS Status
RoHS Compliant

Description

BSC072N03LD G Description
The Infineon Technologies BSC072N03LD G is an N-Channel Power MOSFET making OptiMOS? 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.

BSC072N03LD G Features
Ultra-low gate and output charge
Lowest on-state resistance in small footprint packages
Easy to design in

BSC072N03LD G Applications
Onboard charger
Notebook
Mainboard
DC-DC
VRD/VRM
Motor control
LED

BSC072N03LD G More Descriptions

Dual N-Channel 30 V 7.2 mOhm 31 nC OptiMOS Power Mosfet - TDSON-8
Transistor MOSFET Array Dual N-CH 30V 20A 8-Pin TDSON T/R
MOSFET, N CH, 20A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:57W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHSInfineon SCT
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Certification