Texas Instruments BQ4010YMA-70

Name: BQ4010YMA-70
Brand: Texas Instruments
SKU: 3237390-BQ4010YMA-70
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BQ4010YMA-70

Manufacturer:: Texas Instruments

Ventron No:: 3237390-BQ4010YMA-70

Description:: IC NVSRAM 64KBIT 70NS 28DIP

ECAD Model:

Datasheet:: BQ4010(Y,LY)

Specifications

Texas Instruments BQ4010YMA-70 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments BQ4010YMA-70.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
28-DIP Module (0.61, 15.49mm)
Number of Pins
28
Operating Temperature
0°C~70°C TA
Packaging
Tube
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
28
ECCN Code
EAR99
HTS Code
8542.32.00.41
Subcategory
SRAMs
Technology
NVSRAM (Non-Volatile SRAM)
Voltage - Supply
4.5V~5.5V
Terminal Position
DUAL
Number of Functions
1
Supply Voltage
5V
Terminal Pitch
2.54mm
Frequency
70GHz
Base Part Number
BQ4010
Operating Supply Voltage
5V
Power Supplies
5V
Memory Size
64Kb 8K x 8
Operating Supply Current
50mA
Nominal Supply Current
50mA
Memory Type
Non-Volatile
Memory Format
NVSRAM
Memory Interface
Parallel
Data Bus Width
8b
Organization
8KX8
Memory Width
8
Write Cycle Time - Word, Page
70ns
Density
64 kb
Standby Current-Max
0.004A
Access Time (Max)
70 ns
Word Size
8b
Height Seated (Max)
9.53mm
Length
37.72mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

BQ4010YMA-70 Overview
The product being offered has a Moisture Sensitivity Level (MSL) of 1, indicating that it has an unlimited level of moisture sensitivity. It has a total of 28 terminations and one function, making it a versatile and efficient product. With a frequency of 70GHz, it is capable of handling high-speed operations. The operating supply voltage is 5V, ensuring stable and reliable performance. The memory type is non-volatile, providing data retention even when power is removed. The write cycle time for both word and page is 70ns, enabling fast and efficient data transfer. With a maximum standby current of 0.004A, it ensures low power consumption. The word size is 8b, making it suitable for a variety of applications. This product is not radiation hardened.

BQ4010YMA-70 Features
Package / Case: 28-DIP Module (0.61, 15.49mm)
28 Pins
Operating Supply Voltage:5V
Freguency at 70GHz
70GHz terminals

BQ4010YMA-70 Applications
There are a lot of Texas Instruments
BQ4010YMA-70 Memory applications.

personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic

BQ4010YMA-70 More Descriptions

8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE 0 to 70
Obsolete DUAL Non-Volatile ROHS3Compliant NVSRAM Memory 0C~70C TA 5V 64kb 50mA
Non-Volative SRAM (NVSRAM) 8Kx8 Nonvolatile SRAM
IC NVSRAM 64KBIT PARALLEL 28DIP
OBSOLETE, LTB EXPIRES NOV-30-2013
NV SRAM MODULE, 8KX8, 70NS, CMOS

Product Comparison

The three parts on the right have similar specifications to BQ4010YMA-70.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Subcategory

Technology

Voltage - Supply

Terminal Position

Number of Functions

Supply Voltage

Terminal Pitch

Frequency

Base Part Number

Operating Supply Voltage

Power Supplies

Memory Size

Operating Supply Current

Nominal Supply Current

Memory Type

Memory Format

Memory Interface

Data Bus Width

Organization

Memory Width

Write Cycle Time - Word, Page

Density

Standby Current-Max

Access Time (Max)

Word Size

Height Seated (Max)

Length

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Access Time

View Compare
BQ4010YMA-70

Texas Instruments

Through Hole

Through Hole

28-DIP Module (0.61, 15.49mm)

28

0°C~70°C TA

Tube

no

Obsolete

1 (Unlimited)

28

EAR99

8542.32.00.41

SRAMs

NVSRAM (Non-Volatile SRAM)

4.5V~5.5V

DUAL

1

5V

2.54mm

70GHz

BQ4010

5V

5V

64Kb 8K x 8

50mA

50mA

Non-Volatile

NVSRAM

Parallel

8b

8KX8

8

70ns

64 kb

0.004A

70 ns

8b

9.53mm

37.72mm

No

ROHS3 Compliant

Contains Lead

-

-

-
BQ4014YMB-85

ON Semiconductor

-

Through Hole

32-DIP Module (0.61, 15.49mm)

-

0°C~70°C TA

Tube

-

Obsolete

3 (168 Hours)

-

-

-

-

NVSRAM (Non-Volatile SRAM)

4.5V~5.5V

-

-

-

-

-

-

-

-

2Mb 256K x 8

-

-

Non-Volatile

NVSRAM

Parallel

-

-

-

85ns

-

-

-

-

-

-

-

ROHS3 Compliant

-

32-DIP Module (18.42x52.96)

85ns

BQ4010YMA-70 vs BQ4014YMB-85
BQ4011MA-150

ON Semiconductor

-

Through Hole

28-DIP Module (0.61, 15.49mm)

-

0°C~70°C TA

Tube

-

Obsolete

3 (168 Hours)

-

-

-

-

NVSRAM (Non-Volatile SRAM)

4.75V~5.5V

-

-

-

-

-

-

-

-

256Kb 32K x 8

-

-

Non-Volatile

NVSRAM

Parallel

-

-

-

150ns

-

-

-

-

-

-

-

ROHS3 Compliant

-

28-DIP Module (18.42x37.72)

150ns

BQ4010YMA-70 vs BQ4011MA-150
BQ4011YMA-200

ON Semiconductor

-

Through Hole

28-DIP Module (0.61, 15.49mm)

-

0°C~70°C TA

Tube

-

Obsolete

3 (168 Hours)

-

-

-

-

NVSRAM (Non-Volatile SRAM)

4.5V~5.5V

-

-

-

-

-

-

-

-

256Kb 32K x 8

-

-

Non-Volatile

NVSRAM

Parallel

-

-

-

200ns

-

-

-

-

-

-

-

ROHS3 Compliant

-

28-DIP Module (18.42x37.72)

200ns

BQ4010YMA-70 vs BQ4011YMA-200