Infineon Technologies BGSX212MA18E6327XTSA1
- Part Number:
- BGSX212MA18E6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 4400122-BGSX212MA18E6327XTSA1
- Description:
- CMOS SWITCH
- Datasheet:
- BGSX212MA18E6327XTSA1
Infineon Technologies BGSX212MA18E6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BGSX212MA18E6327XTSA1.
- Factory Lead Time12 Weeks
- Package / Case18-UFQFN Exposed Pad
- Surface MountYES
- Operating Temperature-30°C~85°C
- PackagingTape & Reel (TR)
- Published2005
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations18
- TechnologyCMOS
- Voltage - Supply2.5V~3.4V
- Terminal PositionBOTTOM
- Terminal FormBUTT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.4mm
- Frequency3.8GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBCC-B18
- Supply Voltage-Max (Vsup)3.4V
- Supply Voltage-Min (Vsup)2.5V
- Number of Channels2
- Test Frequency2.5GHz 3.5GHz
- Analog IC - Other TypeCROSS POINT SWITCH
- Impedance50Ohm
- Frequency Range100MHz~3.8GHz
- Insertion Loss0.9dB
- Isolation39dB
- RF TypeLTE
- Length2.4mm
- Height Seated (Max)0.65mm
- Width2mm
- RoHS StatusROHS3 Compliant
BGSX212MA18E6327XTSA1 Overview
As a result of the use of the Tape & Reel (TR) package, the performance of this RF Switch is optimized.As you can see, this RF Switch contains 18 terminations.This RF Switch should operate at a temperature of -30°C~85°C when operating.RF Type LTE from the RF switch ic.RF Switch is capable of supplying a voltage of 2.5V~3.4V volts.
BGSX212MA18E6327XTSA1 Features
Tape & Reel (TR) package
18 terminations
LTE RF Type
BGSX212MA18E6327XTSA1 Applications
There are a lot of Infineon Technologies
BGSX212MA18E6327XTSA1 RF Switches applications.
Dual-band applications
High speed filter selection
Digital transceiver front end switch
IF switching
Tuner modules
Antenna diversity switching
Cellular/PCS Base Stations
ISM
Wireless Local Loop
Smartphones
As a result of the use of the Tape & Reel (TR) package, the performance of this RF Switch is optimized.As you can see, this RF Switch contains 18 terminations.This RF Switch should operate at a temperature of -30°C~85°C when operating.RF Type LTE from the RF switch ic.RF Switch is capable of supplying a voltage of 2.5V~3.4V volts.
BGSX212MA18E6327XTSA1 Features
Tape & Reel (TR) package
18 terminations
LTE RF Type
BGSX212MA18E6327XTSA1 Applications
There are a lot of Infineon Technologies
BGSX212MA18E6327XTSA1 RF Switches applications.
Dual-band applications
High speed filter selection
Digital transceiver front end switch
IF switching
Tuner modules
Antenna diversity switching
Cellular/PCS Base Stations
ISM
Wireless Local Loop
Smartphones
BGSX212MA18E6327XTSA1 More Descriptions
RF CMOS DP12T diversity switch with power handling capability of up to 27dBm, ATSLP-18-2, RoHSInfineon SCT
RF Switch DP12T 100MHz to 3.8GHz 16dB 18-Pin ATSLP EP T/R
RF SWITCH, 3.8GHZ, -30 TO 85DEG C; Frequency Min: 100MHz; Frequency Max: 3.8GHz; RF IC Case Style: ATSLP; No. of Pins: 18Pins; Supply Voltage Min: 2.5V; Supply Voltage Max: 3.4V; Operating Temperature Min: -30°C; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018)
DP12T Diversity Cross Switch for Carrier Aggregation | Summary of Features: RF CMOS DP12T diversity switch with power handling capability of up to 27 dBm; Industrys first flexible carrier aggregation switch via cross switch functionality of two ports; Device configurations SP6T/SP6T, SP5T/SP7T, and SP7T/SP5T featured via cross switch functionality; Suitable for LTE carrier aggregation applications; Ultra-low insertion loss and harmonics generation; 0.1 to 3.8 GHz coverage; High port-to-port-isolation; No decoupling capacitors required if no DC applied on RF lines; Integrated MIPI RFFE interface operating in 1.1 to 1.95 V voltage range; Software programmable MIPI RFFE USID; Leadless and halogen free package ATSLP-18 with lateral size of; 2.0mm x 2.4mm and thickness of 0.6mm; No power supply blocking required; High EMI robustness; RoHS and WEEE compliant package | Target Applications: RF CMOS switch is specifically designed for LTE carrier aggregation applications.
RF Switch DP12T 100MHz to 3.8GHz 16dB 18-Pin ATSLP EP T/R
RF SWITCH, 3.8GHZ, -30 TO 85DEG C; Frequency Min: 100MHz; Frequency Max: 3.8GHz; RF IC Case Style: ATSLP; No. of Pins: 18Pins; Supply Voltage Min: 2.5V; Supply Voltage Max: 3.4V; Operating Temperature Min: -30°C; Operating Temperature Max: 85°C; Product Range: -; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018)
DP12T Diversity Cross Switch for Carrier Aggregation | Summary of Features: RF CMOS DP12T diversity switch with power handling capability of up to 27 dBm; Industrys first flexible carrier aggregation switch via cross switch functionality of two ports; Device configurations SP6T/SP6T, SP5T/SP7T, and SP7T/SP5T featured via cross switch functionality; Suitable for LTE carrier aggregation applications; Ultra-low insertion loss and harmonics generation; 0.1 to 3.8 GHz coverage; High port-to-port-isolation; No decoupling capacitors required if no DC applied on RF lines; Integrated MIPI RFFE interface operating in 1.1 to 1.95 V voltage range; Software programmable MIPI RFFE USID; Leadless and halogen free package ATSLP-18 with lateral size of; 2.0mm x 2.4mm and thickness of 0.6mm; No power supply blocking required; High EMI robustness; RoHS and WEEE compliant package | Target Applications: RF CMOS switch is specifically designed for LTE carrier aggregation applications.
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