BFU730F,115

NXP USA Inc. BFU730F,115

Part Number:
BFU730F,115
Manufacturer:
NXP USA Inc.
Ventron No:
2846109-BFU730F,115
Description:
TRANSISTOR NPN SOT343F
ECAD Model:
Datasheet:
BFU730F,115

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Specifications
NXP USA Inc. BFU730F,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFU730F,115.
  • Factory Lead Time
    13 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-343F
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Base Part Number
    BFU730
  • Pin Count
    4
  • Power - Max
    197mW
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    205 @ 2mA 2V
  • Voltage - Collector Emitter Breakdown (Max)
    2.8V
  • Current - Collector (Ic) (Max)
    30mA
  • Frequency - Transition
    55GHz
  • Source Url Status Check Date
    2013-06-14 00:00:00
  • Noise Figure (dB Typ @ f)
    0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
  • RoHS Status
    ROHS3 Compliant
Description
The BFU730F,115 NXP Semiconductors Transistor is a NPN Bipolar Junction Transistor (BJT) designed for use in RF applications. It is housed in a SOT343F package and has a maximum collector current of 1.5A. It has a maximum collector-emitter voltage of 30V and a maximum power dissipation of 500mW. It has a high gain of up to 200 and a low noise figure of up to 1.5dB. It is suitable for use in amplifiers, oscillators, mixers, and other RF applications. It is also suitable for use in automotive, industrial, and consumer applications.
BFU730F,115 More Descriptions
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Silicon Germanium, NPN
Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin(3 Tab) DFP T/R
BFU730 Series 2.8 V 12.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
RF Transistor, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:55GHz; Power
Rf Trans, Npn, 2.8V, 55Ghz, Sot343F; Transistor Polarity:Npn; Collector Emitter Voltage Max:2.8V; Transition Frequency:55Ghz; Power Dissipation:197Mw; Continuous Collector Current:5Ma; No. Of Pins:4Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Nxp BFU730F,115
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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