NXP USA Inc. BFU730F,115
- Part Number:
- BFU730F,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2846109-BFU730F,115
- Description:
- TRANSISTOR NPN SOT343F
- Datasheet:
- BFU730F,115
NXP USA Inc. BFU730F,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFU730F,115.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-343F
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberBFU730
- Pin Count4
- Power - Max197mW
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce205 @ 2mA 2V
- Voltage - Collector Emitter Breakdown (Max)2.8V
- Current - Collector (Ic) (Max)30mA
- Frequency - Transition55GHz
- Source Url Status Check Date2013-06-14 00:00:00
- Noise Figure (dB Typ @ f)0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
- RoHS StatusROHS3 Compliant
The BFU730F,115 NXP Semiconductors Transistor is a NPN Bipolar Junction Transistor (BJT) designed for use in RF applications. It is housed in a SOT343F package and has a maximum collector current of 1.5A. It has a maximum collector-emitter voltage of 30V and a maximum power dissipation of 500mW. It has a high gain of up to 200 and a low noise figure of up to 1.5dB. It is suitable for use in amplifiers, oscillators, mixers, and other RF applications. It is also suitable for use in automotive, industrial, and consumer applications.
BFU730F,115 More Descriptions
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Silicon Germanium, NPN
Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin(3 Tab) DFP T/R
BFU730 Series 2.8 V 12.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
RF Transistor, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:55GHz; Power
Rf Trans, Npn, 2.8V, 55Ghz, Sot343F; Transistor Polarity:Npn; Collector Emitter Voltage Max:2.8V; Transition Frequency:55Ghz; Power Dissipation:197Mw; Continuous Collector Current:5Ma; No. Of Pins:4Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Nxp BFU730F,115
Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin(3 Tab) DFP T/R
BFU730 Series 2.8 V 12.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
RF Transistor, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:55GHz; Power
Rf Trans, Npn, 2.8V, 55Ghz, Sot343F; Transistor Polarity:Npn; Collector Emitter Voltage Max:2.8V; Transition Frequency:55Ghz; Power Dissipation:197Mw; Continuous Collector Current:5Ma; No. Of Pins:4Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Nxp BFU730F,115
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