NXP USA Inc. BFU660F,115

Name: BFU660F,115
Brand: NXP USA Inc.
SKU: 2465557-BFU660F,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFU660F,115

Manufacturer:: NXP USA Inc.

Ventron No:: 2465557-BFU660F,115

Description:: TRANSISTOR NPN SOT343F

ECAD Model:

Datasheet:: BFU660F,115

Specifications

NXP USA Inc. BFU660F,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFU660F,115.

Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
SOT-343F
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BFU660
Pin Count
4
Power - Max
225mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 10mA 2V
Gain
12dB ~ 21dB
Voltage - Collector Emitter Breakdown (Max)
5.5V
Current - Collector (Ic) (Max)
60mA
Frequency - Transition
21GHz
Source Url Status Check Date
2013-06-14 00:00:00
Noise Figure (dB Typ @ f)
0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
RoHS Status
ROHS3 Compliant

Description

BFU660F,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet BFU660F,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BFU660F,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

BFU660F,115 More Descriptions

BFU660 Series 5.5 V 27 dB Gain NPN Wideband Silicon RF Transistor - SOT-343F-4
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Rf Transistor, Npn, 5.5V, Sot-343F; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:5.5V; Transition Frequency Ft:21Ghz; Power Dissipation Pd:225Mw; Dc Collector Current:60Ma; Dc Current Gain Hfe:90Hfe; Rf Transistor Rohs Compliant: Yes |Nxp BFU660F,115

Product Comparison

The three parts on the right have similar specifications to BFU660F,115.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Base Part Number

Pin Count

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Gain

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Source Url Status Check Date

Noise Figure (dB Typ @ f)

RoHS Status

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Transistor Application

Polarity/Channel Type

Transition Frequency

Power Dissipation-Max (Abs)

Highest Frequency Band

View Compare
BFU660F,115

NXP USA Inc.

13 Weeks

Surface Mount

SOT-343F

150°C TJ

Tape & Reel (TR)

2010

Active

1 (Unlimited)

BFU660

4

225mW

NPN

90 @ 10mA 2V

12dB ~ 21dB

5.5V

60mA

21GHz

2013-06-14 00:00:00

0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BFU610F,115

NXP USA Inc.

13 Weeks

Surface Mount

SOT-343F

150°C TJ

Tape & Reel (TR)

2010

Active

1 (Unlimited)

BFU610

4

136mW

NPN

90 @ 1mA 2V

13.5dB ~ 23.5dB

5.5V

10mA

15GHz

2013-06-14 00:00:00

0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BFU660F,115 vs BFU610F,115
BFU690F,115

NXP USA Inc.

13 Weeks

Surface Mount

SOT-343F

150°C TJ

Tape & Reel (TR)

2010

Active

1 (Unlimited)

BFU690

4

230mW

NPN

90 @ 20mA 2V

15.5dB ~ 18.5dB

5.5V

100mA

18GHz

-

0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz

ROHS3 Compliant

YES

SILICON

e3

4

EAR99

Tin (Sn)

LOW NOISE

8541.21.00.75

BIP RF Small Signal

DUAL

FLAT

260

30

R-PDSO-F4

1

SINGLE

AMPLIFIER

NPN

18000MHz

0.23W

KA B

BFU660F,115 vs BFU690F,115
BFU630F,115

NXP USA Inc.

13 Weeks

Surface Mount

SOT-343F

150°C TJ

Tape & Reel (TR)

2010

Active

1 (Unlimited)

BFU630

4

200mW

NPN

90 @ 5mA 2V

13dB ~ 22.5dB

5.5V

30mA

21GHz

2013-06-14 00:00:00

0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BFU660F,115 vs BFU630F,115