NXP USA Inc. BFM520,115

Name: BFM520,115
Brand: NXP USA Inc.
SKU: 3068708-BFM520,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BFM520,115

Manufacturer:: NXP USA Inc.

Ventron No:: 3068708-BFM520,115

Description:: TRANS NPN DUAL 70MA 8V 6TSSOP

ECAD Model:

Datasheet:: BFM520

Specifications

NXP USA Inc. BFM520,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BFM520,115.

Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tape & Reel (TR)
Published
1996
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW NOISE, HIGH RELIABILITY
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BFM520
Pin Count
6
JESD-30 Code
R-PDSO-G6
Qualification Status
Not Qualified
Number of Elements
2
Configuration
SEPARATE, 2 ELEMENTS
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 20mA 6V
Voltage - Collector Emitter Breakdown (Max)
8V
Current - Collector (Ic) (Max)
70mA
Transition Frequency
9000MHz
Frequency - Transition
9GHz
Highest Frequency Band
L B
Noise Figure (dB Typ @ f)
1.2dB ~ 2.1dB @ 900MHz
RoHS Status
ROHS3 Compliant

Description

Description:
The NXP Semiconductors BFM520,115 is a Trans GP BJT NPN 8V 0.07A 6-Pin TSSOP Transistor. It is a bipolar junction transistor (BJT) designed for radio frequency (RF) applications.

Features:
• NPN Trans GP BJT
• 8V Voltage Rating
• 0.07A Current Rating
• 6-Pin TSSOP Package
• Designed for RF Applications

Applications:
The NXP Semiconductors BFM520,115 is suitable for use in a variety of RF applications, such as amplifiers, oscillators, mixers, and switches. It can also be used in other applications that require a high-performance transistor.

BFM520,115 More Descriptions

Bipolar (Bjt) Single Transistor, Dual Npn, 8 V, 9 Ghz, 1 W, 70 Ma, 120 Rohs Compliant: Yes
Trans RF BJT NPN 8V 0.07A 1000mW 6-Pin TSSOP T/R
TRANS NPN DUAL 70MA 8V SOT363; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:8V; Transition Frequency ft:9GHz; Power Dissipation
TRANS NPN DUAL 70MA 8V SOT363; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 8V; Transition Frequency ft: 9GHz; Power Dissipation Pd: 1W; DC Collector Current: 70mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 20mA; Gain Bandwidth ft Typ: 9GHz; Hfe Min: 60; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: RF Wideband

Certification