Nexperia USA Inc. BF820W,135
- Part Number:
- BF820W,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463872-BF820W,135
- Description:
- TRANS NPN 300V 0.05A SOT323
- Datasheet:
- BF820W,135
Nexperia USA Inc. BF820W,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BF820W,135.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- HTS Code8541.21.00.95
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBF820
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power - Max200mW
- Gain Bandwidth Product60MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300V
- Max Collector Current50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 25mA 20V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 30mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency60MHz
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)5V
- VCEsat-Max0.6 V
- Collector-Base Capacitance-Max1.6pF
- RoHS StatusROHS3 Compliant
BF820W,135 Overview
This device has a DC current gain of 50 @ 25mA 20V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 30mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 60MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 50mA volts is possible.
BF820W,135 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820W,135 Applications
There are a lot of Nexperia USA Inc.
BF820W,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 50 @ 25mA 20V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 30mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 60MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 50mA volts is possible.
BF820W,135 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF820W,135 Applications
There are a lot of Nexperia USA Inc.
BF820W,135 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BF820W,135 More Descriptions
300V 200mW 50mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BF820W,135
Trans GP BJT NPN 300V 0.05A 3-Pin SC-70 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
BF820W - NPN high voltage transistor
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BF820W,135
Trans GP BJT NPN 300V 0.05A 3-Pin SC-70 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
BF820W - NPN high voltage transistor
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