BF820W,135

Nexperia USA Inc. BF820W,135

Part Number:
BF820W,135
Manufacturer:
Nexperia USA Inc.
Ventron No:
2463872-BF820W,135
Description:
TRANS NPN 300V 0.05A SOT323
ECAD Model:
Datasheet:
BF820W,135

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Specifications
Nexperia USA Inc. BF820W,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BF820W,135.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • HTS Code
    8541.21.00.95
  • Max Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BF820
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power - Max
    200mW
  • Gain Bandwidth Product
    60MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    300V
  • Max Collector Current
    50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 25mA 20V
  • Current - Collector Cutoff (Max)
    10nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 30mA
  • Collector Emitter Breakdown Voltage
    300V
  • Transition Frequency
    60MHz
  • Max Breakdown Voltage
    300V
  • Collector Base Voltage (VCBO)
    300V
  • Emitter Base Voltage (VEBO)
    5V
  • VCEsat-Max
    0.6 V
  • Collector-Base Capacitance-Max
    1.6pF
  • RoHS Status
    ROHS3 Compliant
Description
BF820W,135 Overview
This device has a DC current gain of 50 @ 25mA 20V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 30mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 60MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 50mA volts is possible.

BF820W,135 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz


BF820W,135 Applications
There are a lot of Nexperia USA Inc.
BF820W,135 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BF820W,135 More Descriptions
300V 200mW 50mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BF820W,135
Trans GP BJT NPN 300V 0.05A 3-Pin SC-70 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
BF820W - NPN high voltage transistor
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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