Diodes Incorporated BCX5316TA

Name: BCX5316TA
Brand: Diodes Incorporated
SKU: 2464869-BCX5316TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCX5316TA

Manufacturer:: Diodes Incorporated

Ventron No:: 2464869-BCX5316TA

Description:: TRANS PNP 80V 1A SOT-89

ECAD Model:

Datasheet:: BCX5316TA

Specifications

Diodes Incorporated BCX5316TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BCX5316TA.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
150MHz
Base Part Number
BCX53
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
-80V
Current - Collector (Ic) (Max)
1A
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
-100V
Emitter Base Voltage (VEBO)
-5V
hFE Min
25
Max Junction Temperature (Tj)
150°C
Continuous Collector Current
-1A
Height
1.6mm
Length
4.5mm
Width
2.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCX5316TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.

BCX5316TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz

BCX5316TA Applications
There are a lot of Diodes Incorporated
BCX5316TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCX5316TA More Descriptions

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3 Tab) SOT-89 T/R / TRANS PNP 80V 1A SOT-89
BCX5316 Series 1 A 80 V SMT PNP Silicon Planar Medium Power Transistor - SOT-89
Trans GP BJT PNP 80V 1A (3 Tab) SOT89 | Diodes Inc BCX5316TA
Bipolar Transistors - BJT PNP Medium Power
TRANSISTOR, PNP, 80V, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:1.5A; Termination Type:SMD; Voltage Vcbo:100V

Product Comparison

The three parts on the right have similar specifications to BCX5316TA.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Current - Collector (Ic) (Max)

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Max Junction Temperature (Tj)

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Surface Mount

HTS Code

Terminal Position

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

Frequency - Transition

JESD-30 Code

Collector-Base Capacitance-Max

View Compare
BCX5316TA

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-243AA

3

51.993025mg

SILICON

-65°C~150°C TJ

Cut Tape (CT)

2006

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

-80V

1W

FLAT

260

-1A

150MHz

BCX53

3

1

Single

1W

COLLECTOR

SWITCHING

150MHz

PNP

PNP

-80V

1A

100 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

-80V

1A

150MHz

-500mV

80V

-100V

-5V

25

150°C

-1A

1.6mm

4.5mm

2.5mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
BCX56

PHILIPS

-

-

-

SOT-89(SOT-89-3)

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NPN

-

-

-

-

-

-

1A

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

500mW

80V

-

-

-

-

-

-

-

-

-

BCX5316TA vs BCX56
BCX55-10,115

Nexperia USA Inc.

4 Weeks

-

Surface Mount

TO-243AA

3

-

SILICON

150°C TJ

Tape & Reel (TR)

2011

e3

-

Active

1 (Unlimited)

3

-

-

Tin (Sn)

-

-

-

-

FLAT

NOT SPECIFIED

-

-

BCX55

3

1

-

500mW

COLLECTOR

SWITCHING

-

NPN

NPN

-

-

63 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

-

1A

180MHz

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

1.25W

60V

YES

8541.29.00.75

SINGLE

NOT SPECIFIED

Not Qualified

SINGLE

180MHz

-

-

BCX5316TA vs BCX55-10,115
BCX5510TA

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-243AA

4

51.993025mg

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2011

e3

yes

Active

1 (Unlimited)

3

-

-

Matte Tin (Sn)

HIGH RELIABILITY

-

-

1W

FLAT

-

-

150MHz

BCX5510

3

1

Single

1W

COLLECTOR

SWITCHING

150MHz

NPN

NPN

60V

1A

63 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

60V

-

150MHz

500mV

60V

60V

5V

-

-

-

1.6mm

4.6mm

2.6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

R-PSSO-F3

25pF

BCX5316TA vs BCX5510TA