Fairchild/ON Semiconductor BCW89

Name: BCW89
Brand: Fairchild/ON Semiconductor
SKU: 2845823-BCW89
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCW89

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2845823-BCW89

Description:: TRANS PNP 60V 0.5A SOT23

ECAD Model:

Datasheet:: BCW89

Specifications

Fairchild/ON Semiconductor BCW89 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BCW89.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time
39 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
200mA
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCW89
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-300mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-5V
hFE Min
120
Height
930μm
Length
2.92mm
Width
1.3mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCW89 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 500μA, 10mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

BCW89 Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is 200mA

BCW89 Applications
There are a lot of ON Semiconductor
BCW89 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCW89 More Descriptions

BCW89 Series 60 V CE Breakdown 0.5 A PNP General Purpose Transistor - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
BCW89 Trans GP BJT PNP 60V 0.5A 3-Pin SOT-23 RoHS
Bipolar Transistors - BJT SOT-23 PNP GP AMP
TRANSISTOR PNP 60V 500MA SOT23
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA.
Transistor; Transistor Type:Bipolar; Package/Case:SOT-323; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:200mA; Voltage Rating:60V ;RoHS Compliant: Yes
BIPOLAR TRANSISTOR, PNP, -60V; Transisto; BIPOLAR TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:350mW; DC Collector Current:-500mA; DC Current Gain hFE:120; Operating Temperature Min:-55°C; No. of Pins:3

Certification