BCR198SH6327XTSA1

Infineon Technologies BCR198SH6327XTSA1

Part Number:
BCR198SH6327XTSA1
Manufacturer:
Infineon Technologies
Ventron No:
2844681-BCR198SH6327XTSA1
Description:
TRANS 2PNP PREBIAS 0.25W SOT363
ECAD Model:
Datasheet:
BCR198SH6327XTSA1

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Specifications
Infineon Technologies BCR198SH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCR198SH6327XTSA1.
  • Factory Lead Time
    26 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-VSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    BUILT IN BIAS RESISTANCE RATIO IS 1
  • Max Power Dissipation
    250mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Reference Standard
    AEC-Q101
  • Number of Elements
    2
  • Polarity
    PNP
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Transistor Type
    2 PNP - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    300mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 5mA 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Transition Frequency
    190MHz
  • Collector Emitter Saturation Voltage
    300mV
  • Frequency - Transition
    190MHz
  • hFE Min
    70
  • Resistor - Base (R1)
    47k Ω
  • Resistor - Emitter Base (R2)
    47k Ω
  • Height
    800μm
  • Length
    2mm
  • Width
    1.25mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BCR198SH6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR198SH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR198SH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BCR198SH6327XTSA1 More Descriptions
Trans Digital BJT PNP 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
PNP Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1 = 47 k , R2 = 47 k ); BCR198S: Two internally isolated transistors with good matching in one multichip package; BCR198S: For orientation in reel see package information below; Pb-free (RoHS compliant) package 1); Qualified according AEC Q101
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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