Infineon Technologies BCR183SH6327XTSA1
- Part Number:
- BCR183SH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2844662-BCR183SH6327XTSA1
- Description:
- TRANS 2PNP PREBIAS 0.25W SOT363
- Datasheet:
- BCR183SH6327XTSA1
Infineon Technologies BCR183SH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCR183SH6327XTSA1.
- Factory Lead Time26 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-VSSOP, SC-88, SOT-363
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Reference StandardAEC-Q101
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor Type2 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA 5V
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage300mV
- Frequency - Transition200MHz
- hFE Min30
- Resistor - Base (R1)10k Ω
- Resistor - Emitter Base (R2)10k Ω
- Height800μm
- Length2mm
- Width1.25mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCR183SH6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR183SH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR183SH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR183SH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR183SH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BCR183SH6327XTSA1 More Descriptions
BCR183 Series PNP 50 V 100 mA SMT Silicon Digital Transistor - SOT-363-6
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
PNP Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1 = 10 k , R2 = 10 k); BCR183S / U: Two internally isolated transistors with good matching in one multichip package; BCR183S / U: For orientation in reel see package information below; Pb-free (RoHS compliant) package 1); Qualified according AEC Q101
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
PNP Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1 = 10 k , R2 = 10 k); BCR183S / U: Two internally isolated transistors with good matching in one multichip package; BCR183S / U: For orientation in reel see package information below; Pb-free (RoHS compliant) package 1); Qualified according AEC Q101
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