Infineon Technologies BCR108SH6327XTSA1
- Part Number:
- BCR108SH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2844635-BCR108SH6327XTSA1
- Description:
- TRANS 2NPN PREBIAS 0.25W SOT363
- Datasheet:
- BCR108SH6327XTSA1
Infineon Technologies BCR108SH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCR108SH6327XTSA1.
- Factory Lead Time26 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-VSSOP, SC-88, SOT-363
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Base Part NumberBCR108S
- Reference StandardAEC-Q101
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA 5V
- Vce Saturation (Max) @ Ib, Ic300mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency170MHz
- Collector Emitter Saturation Voltage300mV
- Frequency - Transition170MHz
- hFE Min70
- Resistor - Base (R1)2.2k Ω
- Resistor - Emitter Base (R2)47k Ω
- Height800μm
- Length2mm
- Width1.25mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BCR108SH6327XTSA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR108SH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR108SH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet BCR108SH6327XTSA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BCR108SH6327XTSA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
BCR108SH6327XTSA1 More Descriptions
BCR108 Series NPN 50 V 100 mA SMT Silicon Digital Transistor - SOT-363-6
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R
70@5mA,5V 2 NPN - Pre-Biased 250mW 100mA 50V SOT-363-6 Digital Transistors ROHS
BCR 108S, Dual NPN Digi Transistor,100 mA 50V 2.2 kOhm, Ratio Of.047,6-Pin SOT-363 | Infineon BCR 108S
NPN Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1=2.2 k, R2=47 k); BCR108S: Two internally isolated transistors with good matching in one multichip package; BCR108S: For orientation in reel see package information below; Pb-free (RoHS compliant) package1); Qualified according AEC Q101
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R
70@5mA,5V 2 NPN - Pre-Biased 250mW 100mA 50V SOT-363-6 Digital Transistors ROHS
BCR 108S, Dual NPN Digi Transistor,100 mA 50V 2.2 kOhm, Ratio Of.047,6-Pin SOT-363 | Infineon BCR 108S
NPN Silicon Digital Transistor | Summary of Features: Switching circuit, inverter, interface circuit, driver circuit; Built in bias resistor (R1=2.2 k, R2=47 k); BCR108S: Two internally isolated transistors with good matching in one multichip package; BCR108S: For orientation in reel see package information below; Pb-free (RoHS compliant) package1); Qualified according AEC Q101
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