PHI BCP52-16

Part Number:: BCP52-16

Manufacturer:: PHI

Ventron No:: 5533978-BCP52-16

Description:: passive components in stock

ECAD Model:

Datasheet:: BCP52-16

Specifications

PHI BCP52-16 technical specifications, attributes, parameters and parts with similar specifications to PHI BCP52-16.

Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Pbfree Code
no
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
NOT SPECIFIED
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PDSO-G4
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1.4W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
1A
Transition Frequency
125MHz
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant

Description

BCP52-16 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Parts of this part have transition frequencies of 125MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.

BCP52-16 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 125MHz

BCP52-16 Applications
There are a lot of Rochester Electronics, LLC
BCP52-16 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCP52-16 More Descriptions

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Transistor PNP BCP52/BCP52/16 PHILIPS RoHS Ampere=1 V=60 SOT223
Trans GP BJT PNP 60V 1A 1350mW Automotive 4-Pin(3 Tab) SC-73
TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power
SOT223 Bipolar Transistors - BJT ROHS
TRANSISTOR, PNP, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:650mW; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Av Current Ic:1A; Collector Emitter Voltage Vces:-500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:15µA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:130MHz; Hfe Min:100; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:650mW; Power Dissipation Ptot Max:1.37W; Termination Type:SMD; Voltage Vcbo:60V
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = -1 / Collector-Emitter Voltage (Vceo) V = -60 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = -60 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 145 / Power Dissipation (Pd) W = 1.35 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -0.5 / Reflow Temperature Max. °C = 260

Certification