Diodes Incorporated BC857BS-7-F

Name: BC857BS-7-F
Brand: Diodes Incorporated
SKU: 2843980-BC857BS-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC857BS-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 2843980-BC857BS-7-F

Description:: TRANS 2PNP 45V 0.1A SOT363

ECAD Model:

Datasheet:: BC857BS-7-F

Specifications

Diodes Incorporated BC857BS-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC857BS-7-F.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Max Power Dissipation
200mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
2
Polarity
PNP
Element Configuration
Dual
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Transistor Type
2 PNP (Dual)
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
-45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-400mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The BC857BS-7-F is a bipolar (BJT) single transistor from Diodes Inc. It is a PNP transistor with a voltage rating of -45 V and a frequency rating of 100 MHz. It has a power rating of 200 mW and a current rating of -100 mA. The transistor has a high current gain of 220 hFE.

Features

- Voltage rating of -45 V
- Frequency rating of 100 MHz
- Power rating of 200 mW
- Current rating of -100 mA
- High current gain of 220 hFE

Application

The BC857BS-7-F is suitable for a wide range of applications, including power management, audio amplifiers, and signal switching. It is also suitable for use in automotive, industrial, and consumer electronics.

BC857BS-7-F More Descriptions

DIODES INC. - BC857BS-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 200 mW, -100 mA, 220 hFE
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Transistor, PNP, SOT363; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:100MHz; Power Dissipation
TRANSISTOR, PNP, -45V, -100mA, 200mW, SOT-363; Transistor Polarity:PNP; No. of Pins:6Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:125°C; Product Range:-; Qualification:-; MSL:MSL 1 - Unlimited RoHS Compliant: Yes
TRANSISTOR, PNP, SOT363; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 220hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -400mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 220; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 125°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

Certification