BC857BS-13-F

Diodes Incorporated BC857BS-13-F

Part Number:
BC857BS-13-F
Manufacturer:
Diodes Incorporated
Ventron No:
3068259-BC857BS-13-F
Description:
TRANS 2PNP 45V 0.1A SOT363
ECAD Model:
Datasheet:
BC857BS-13-F

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Diodes Incorporated BC857BS-13-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC857BS-13-F.
  • Factory Lead Time
    19 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    200mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC857BS
  • Reference Standard
    AEC-Q101
  • Number of Elements
    2
  • Polarity
    PNP
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Transistor Type
    2 PNP (Dual)
  • Collector Emitter Voltage (VCEO)
    400mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    220 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    45V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    -400mV
  • Collector Base Voltage (VCBO)
    -50V
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    220
  • Continuous Collector Current
    -100mA
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
Description
Diodes Inc. Transistors - Bipolar (BJT) - Arrays BC857BS-13-F are a type of transistor that is used in a variety of applications. These transistors are PNP type, meaning they are designed to be used in a circuit with a positive voltage supply. They have a maximum voltage rating of 45V and a maximum current rating of 0.1A. They come in a 6-pin SOT-363 package, making them suitable for use in a variety of applications.

The features of Diodes Inc. Transistors - Bipolar (BJT) - Arrays BC857BS-13-F include a low saturation voltage, high gain, and low noise. These features make them suitable for use in a variety of applications, such as audio amplifiers, switching circuits, and power supplies. They are also suitable for use in low-power applications, such as logic circuits and signal processing.

The applications of Diodes Inc. Transistors - Bipolar (BJT) - Arrays BC857BS-13-F include audio amplifiers, switching circuits, power supplies, logic circuits, and signal processing. They are also suitable for use in low-power applications, such as logic circuits and signal processing.
BC857BS-13-F More Descriptions
Bipolar Array, Dual Pnp, 45V/0.1A/Sot363 Rohs Compliant: Yes |Diodes Inc. BC857BS-13-F
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon
45V 100 mA Dual PNP Small Signal Surface Mount Transistor - SOT-363
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.