Diodes Incorporated BC857BS-13-F
- Part Number:
- BC857BS-13-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068259-BC857BS-13-F
- Description:
- TRANS 2PNP 45V 0.1A SOT363
- Datasheet:
- BC857BS-13-F
Diodes Incorporated BC857BS-13-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC857BS-13-F.
- Factory Lead Time19 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation200mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC857BS
- Reference StandardAEC-Q101
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Transistor Type2 PNP (Dual)
- Collector Emitter Voltage (VCEO)400mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-400mV
- Collector Base Voltage (VCBO)-50V
- Emitter Base Voltage (VEBO)-5V
- hFE Min220
- Continuous Collector Current-100mA
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
Diodes Inc. Transistors - Bipolar (BJT) - Arrays BC857BS-13-F are a type of transistor that is used in a variety of applications. These transistors are PNP type, meaning they are designed to be used in a circuit with a positive voltage supply. They have a maximum voltage rating of 45V and a maximum current rating of 0.1A. They come in a 6-pin SOT-363 package, making them suitable for use in a variety of applications.
The features of Diodes Inc. Transistors - Bipolar (BJT) - Arrays BC857BS-13-F include a low saturation voltage, high gain, and low noise. These features make them suitable for use in a variety of applications, such as audio amplifiers, switching circuits, and power supplies. They are also suitable for use in low-power applications, such as logic circuits and signal processing.
The applications of Diodes Inc. Transistors - Bipolar (BJT) - Arrays BC857BS-13-F include audio amplifiers, switching circuits, power supplies, logic circuits, and signal processing. They are also suitable for use in low-power applications, such as logic circuits and signal processing.
The features of Diodes Inc. Transistors - Bipolar (BJT) - Arrays BC857BS-13-F include a low saturation voltage, high gain, and low noise. These features make them suitable for use in a variety of applications, such as audio amplifiers, switching circuits, and power supplies. They are also suitable for use in low-power applications, such as logic circuits and signal processing.
The applications of Diodes Inc. Transistors - Bipolar (BJT) - Arrays BC857BS-13-F include audio amplifiers, switching circuits, power supplies, logic circuits, and signal processing. They are also suitable for use in low-power applications, such as logic circuits and signal processing.
BC857BS-13-F More Descriptions
Bipolar Array, Dual Pnp, 45V/0.1A/Sot363 Rohs Compliant: Yes |Diodes Inc. BC857BS-13-F
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon
45V 100 mA Dual PNP Small Signal Surface Mount Transistor - SOT-363
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon
45V 100 mA Dual PNP Small Signal Surface Mount Transistor - SOT-363
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