Diodes Incorporated BC857B-7-F
- Part Number:
- BC857B-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463427-BC857B-7-F
- Description:
- TRANS PNP 45V 0.1A SOT23-3
- Datasheet:
- BC857B-7-F
Diodes Incorporated BC857B-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC857B-7-F.
- Factory Lead Time19 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency200MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC857B
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation310mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-45V
- Max Collector Current-100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage-45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency200MHz
- Collector Emitter Saturation Voltage-250mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)-50V
- Emitter Base Voltage (VEBO)-5V
- hFE Min220
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC857B-7-F Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of -100mA volts is possible.
BC857B-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
BC857B-7-F Applications
There are a lot of Diodes Incorporated
BC857B-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of -100mA volts is possible.
BC857B-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
BC857B-7-F Applications
There are a lot of Diodes Incorporated
BC857B-7-F applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC857B-7-F More Descriptions
BC857B Series PNP 45 V 300 mW Surface Mount Small Signal Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Transistor PNP 45V 0.1A SOT23 | Diodes Inc BC857B-7-F
Trans GP BJT PNP 45V 0.1A 350mW 3-Pin SOT-23 T/R
Transistor, PNP, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW;
TRANSISTOR, PNP, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 300mW; DC Collector Current: -100mA; DC Current Gain hFE: 330hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 220; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Transistor PNP 45V 0.1A SOT23 | Diodes Inc BC857B-7-F
Trans GP BJT PNP 45V 0.1A 350mW 3-Pin SOT-23 T/R
Transistor, PNP, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW;
TRANSISTOR, PNP, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 300mW; DC Collector Current: -100mA; DC Current Gain hFE: 330hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 220; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
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