BC857B-7-F

Diodes Incorporated BC857B-7-F

Part Number:
BC857B-7-F
Manufacturer:
Diodes Incorporated
Ventron No:
2463427-BC857B-7-F
Description:
TRANS PNP 45V 0.1A SOT23-3
ECAD Model:
Datasheet:
BC857B-7-F

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Specifications
Diodes Incorporated BC857B-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC857B-7-F.
  • Factory Lead Time
    19 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    300mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    200MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC857B
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    310mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    200MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    -45V
  • Max Collector Current
    -100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    220 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    -45V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    200MHz
  • Collector Emitter Saturation Voltage
    -250mV
  • Max Breakdown Voltage
    45V
  • Collector Base Voltage (VCBO)
    -50V
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    220
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • Length
    3.05mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BC857B-7-F Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 200MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of -100mA volts is possible.

BC857B-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz


BC857B-7-F Applications
There are a lot of Diodes Incorporated
BC857B-7-F applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC857B-7-F More Descriptions
BC857B Series PNP 45 V 300 mW Surface Mount Small Signal Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
Transistor PNP 45V 0.1A SOT23 | Diodes Inc BC857B-7-F
Trans GP BJT PNP 45V 0.1A 350mW 3-Pin SOT-23 T/R
Transistor, PNP, SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency ft:200MHz; Power Dissipation Pd:300mW;
TRANSISTOR, PNP, SOT23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 300mW; DC Collector Current: -100mA; DC Current Gain hFE: 330hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -650mV; Current Ic Continuous a Max: -100mA; Gain Bandwidth ft Typ: 200MHz; Hfe Min: 220; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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