Nexperia USA Inc. BC857B,235
- Part Number:
- BC857B,235
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2464454-BC857B,235
- Description:
- TRANS PNP 45V 0.1A SOT23
- Datasheet:
- BC857B,235
Nexperia USA Inc. BC857B,235 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC857B,235.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC857
- Pin Count3
- Reference StandardIEC-60134
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- JEDEC-95 CodeTO-236AB
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- VCEsat-Max0.65 V
- RoHS StatusROHS3 Compliant
BC857B,235 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BC857B,235 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857B,235 Applications
There are a lot of Nexperia USA Inc.
BC857B,235 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BC857B,235 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC857B,235 Applications
There are a lot of Nexperia USA Inc.
BC857B,235 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC857B,235 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 45V 0.1A 250mW Automotive 3-Pin SOT-23 T/R
BC857B Series 45 V 100 mA PNP Surface Mount Silicon Transistor - SOT-23
vp_BC856_BC857_BC858 - 65 V, 100 mA PNP general-purpose transistors
1nA 45V 200mW 100mA 220@2mA,5V 100MHz 250mV@100mA,5mA PNP 150¡æ@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 45V 0.1A 250mW Automotive 3-Pin SOT-23 T/R
BC857B Series 45 V 100 mA PNP Surface Mount Silicon Transistor - SOT-23
vp_BC856_BC857_BC858 - 65 V, 100 mA PNP general-purpose transistors
1nA 45V 200mW 100mA 220@2mA,5V 100MHz 250mV@100mA,5mA PNP 150¡æ@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
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