BC857B,235

Nexperia USA Inc. BC857B,235

Part Number:
BC857B,235
Manufacturer:
Nexperia USA Inc.
Ventron No:
2464454-BC857B,235
Description:
TRANS PNP 45V 0.1A SOT23
ECAD Model:
Datasheet:
BC857B,235

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Specifications
Nexperia USA Inc. BC857B,235 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC857B,235.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC857
  • Pin Count
    3
  • Reference Standard
    IEC-60134
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    250mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    220 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • JEDEC-95 Code
    TO-236AB
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    45V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • VCEsat-Max
    0.65 V
  • RoHS Status
    ROHS3 Compliant
Description
BC857B,235 Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

BC857B,235 Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz


BC857B,235 Applications
There are a lot of Nexperia USA Inc.
BC857B,235 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC857B,235 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Trans GP BJT PNP 45V 0.1A 250mW Automotive 3-Pin SOT-23 T/R
BC857B Series 45 V 100 mA PNP Surface Mount Silicon Transistor - SOT-23
vp_BC856_BC857_BC858 - 65 V, 100 mA PNP general-purpose transistors
1nA 45V 200mW 100mA 220@2mA,5V 100MHz 250mV@100mA,5mA PNP 150¡æ@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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