ON Semiconductor BC856BDW1T1G

Name: BC856BDW1T1G
Brand: ON Semiconductor
SKU: 3553625-BC856BDW1T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC856BDW1T1G

Manufacturer:: ON Semiconductor

Ventron No:: 3553625-BC856BDW1T1G

Description:: TRANS 2PNP 65V 0.1A SOT363

ECAD Model:

Datasheet:: BC856BDW1T1G

Specifications

ON Semiconductor BC856BDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC856BDW1T1G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-65V
Max Power Dissipation
380mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
2
Polarity
PNP
Element Configuration
Dual
Power Dissipation
380mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
100MHz
Transistor Type
2 PNP (Dual)
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-650mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
220
Height
900μm
Length
2mm
Width
1.25mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description:

The BC856BDW1T1G is a 2-pin PNP Bipolar Transistor Array in a SOT-363 package from ON Semiconductor. It has a maximum collector-emitter voltage of 65V and a maximum collector current of 0.1A.

Features:

• 2-pin PNP Bipolar Transistor Array
• Maximum Collector-Emitter Voltage: 65V
• Maximum Collector Current: 0.1A
• Package: SOT-363
• Lead-Free

Applications:

The BC856BDW1T1G is suitable for use in a variety of applications, including power management, audio amplifiers, and switching circuits. It is also suitable for use in automotive and industrial applications.

BC856BDW1T1G More Descriptions

Bipolar Transistors - BJT PNP Transistor General Purpose
Trans GP BJT PNP 65V 0.1A 6-Pin SC-88 T/R - Product that comes on tape, but is not reeled
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon
Dual PNP 65 V 100 mA SMT General Purpose Transistor - SOT-363
Trans GP BJT PNP 65V 0.2A 380mW 6-Pin SC-88 T/R / TRANS 2PNP 65V 0.1A SOT363
ON Semi BC856BDW1T1G Dual PNP Bipolar Transistor, 0.1 A, 65 V, 6-Pin SC-88 | ON Semiconductor BC856BDW1T1G
Transistor, PNP, -65V, -100MA, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:380mW; DC
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
TRANSISTOR, PNP, DUAL, -65V SOT-363, FULL REEL; Transistor Polarity:Dual PNP; Collector Emitter Voltage Max NPN:-; Collector Emitter Voltage Max PNP:-65V; Continuous Collector Current NPN:-; Continuous Collector Current PNP:100mA RoHS Compliant: Yes
TRANSISTOR, PNP, -65V, -100MA, SOT-363-6; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-363; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Transition Frequency ft: 100MHz
Transistor Polarity = PNP / Configuration = Dual / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 150 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 380 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260

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