Diodes Incorporated BC856AS-7
- Part Number:
- BC856AS-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3584688-BC856AS-7
- Description:
- TRANS 2PNP 65V 0.1A SOT363
- Datasheet:
- BC856AS-7
Diodes Incorporated BC856AS-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC856AS-7.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation200mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC856AS
- Pin Count6
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Transistor Type2 PNP (Dual)
- Collector Emitter Voltage (VCEO)65V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage65V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-250mV
- Max Breakdown Voltage65V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min125
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description: The BC856AS-7 is a 2-Polar N-P-N (2PNP) Bipolar Junction Transistor (BJT) Array manufactured by Diodes Inc. It is a surface-mount device with a SOT363 package.
Features:
- Maximum Collector-Emitter Voltage of 65V
- Maximum Collector Current of 0.1A
- Low Saturation Voltage
- High Gain Bandwidth Product
- Low Noise
- High Switching Speed
- Low Power Consumption
- High Reliability
- RoHS Compliant
Applications: The BC856AS-7 is suitable for a wide range of applications, including power management, audio amplifiers, motor control, and signal processing. It is also suitable for use in automotive, industrial, and consumer electronics.
Features:
- Maximum Collector-Emitter Voltage of 65V
- Maximum Collector Current of 0.1A
- Low Saturation Voltage
- High Gain Bandwidth Product
- Low Noise
- High Switching Speed
- Low Power Consumption
- High Reliability
- RoHS Compliant
Applications: The BC856AS-7 is suitable for a wide range of applications, including power management, audio amplifiers, motor control, and signal processing. It is also suitable for use in automotive, industrial, and consumer electronics.
BC856AS-7 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon
Bipolar Array, Dual Pnp, 65V/0.1A/Sot363 Rohs Compliant: Yes |Diodes Inc. BC856AS-7
Trans GP BJT PNP 65V 0.1A 200mW 6-Pin SOT-363 T/R / TRANS 2PNP 65V 0.1A SOT363
BC856AS Series 65 V 100 mA Dual PNP SMT Small Signal Transistor - SOT-363
Bipolar Array, Dual Pnp, 65V/0.1A/Sot363 Rohs Compliant: Yes |Diodes Inc. BC856AS-7
Trans GP BJT PNP 65V 0.1A 200mW 6-Pin SOT-363 T/R / TRANS 2PNP 65V 0.1A SOT363
BC856AS Series 65 V 100 mA Dual PNP SMT Small Signal Transistor - SOT-363
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