BC856AS-7

Diodes Incorporated BC856AS-7

Part Number:
BC856AS-7
Manufacturer:
Diodes Incorporated
Ventron No:
3584688-BC856AS-7
Description:
TRANS 2PNP 65V 0.1A SOT363
ECAD Model:
Datasheet:
BC856AS-7

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Specifications
Diodes Incorporated BC856AS-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC856AS-7.
  • Factory Lead Time
    15 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Weight
    6.010099mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    200mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC856AS
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    PNP
  • Element Configuration
    Dual
  • Power Dissipation
    200mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Transistor Type
    2 PNP (Dual)
  • Collector Emitter Voltage (VCEO)
    65V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    125 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    65V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    -250mV
  • Max Breakdown Voltage
    65V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    125
  • Height
    1mm
  • Length
    2.2mm
  • Width
    1.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description: The BC856AS-7 is a 2-Polar N-P-N (2PNP) Bipolar Junction Transistor (BJT) Array manufactured by Diodes Inc. It is a surface-mount device with a SOT363 package.

Features:
- Maximum Collector-Emitter Voltage of 65V
- Maximum Collector Current of 0.1A
- Low Saturation Voltage
- High Gain Bandwidth Product
- Low Noise
- High Switching Speed
- Low Power Consumption
- High Reliability
- RoHS Compliant

Applications: The BC856AS-7 is suitable for a wide range of applications, including power management, audio amplifiers, motor control, and signal processing. It is also suitable for use in automotive, industrial, and consumer electronics.
BC856AS-7 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon
Bipolar Array, Dual Pnp, 65V/0.1A/Sot363 Rohs Compliant: Yes |Diodes Inc. BC856AS-7
Trans GP BJT PNP 65V 0.1A 200mW 6-Pin SOT-363 T/R / TRANS 2PNP 65V 0.1A SOT363
BC856AS Series 65 V 100 mA Dual PNP SMT Small Signal Transistor - SOT-363
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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