Fairchild/ON Semiconductor BC848BMTF

Name: BC848BMTF
Brand: Fairchild/ON Semiconductor
SKU: 2463200-BC848BMTF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC848BMTF

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463200-BC848BMTF

Description:: TRANS NPN 30V 0.1A SOT-23

ECAD Model:

Datasheet:: BC846-BC850

Specifications

Fairchild/ON Semiconductor BC848BMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC848BMTF.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
30V
Max Power Dissipation
310mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
100mA
Frequency
300MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC848
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
30V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
110
Height
930μm
Length
2.92mm
Width
1.3mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BC848BMTF Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.

BC848BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz

BC848BMTF Applications
There are a lot of ON Semiconductor
BC848BMTF applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC848BMTF More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Transistor (BJT) - Discrete ON Semiconductor BC848BMTF SOT 23-3
Bipolar Transistors - BJT SOT-23 NPN GP AMP
Trans GP BJT NPN 30V 0.1A 3-Pin SOT-23 T/R - Tape and Reel

Certification