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BC847C More Descriptions
Transistor GP BJT NPN 45V 100mA 3-Pin SOT-23Avnet Japan
Transistor, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC
Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:-; Dc Current Gain Hfe Min:125Hfe Rohs Compliant: Yes |Multicomp Pro BC847C
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: -; Power Dissipation Pd: 250mW; DC Collector Current: 100mA; DC Current Gain hFE: 125hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 2mA; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 420; No. of Transistors: 1; Noise Factor Max: 10dB; Power Dissipation Ptot Max: 250mW; SMD Marking: 1G; Termination Type: Surface Mount Device; Voltage Vcbo: 50V
Transistor, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC
Transistor Polarity:Npn; Collector Emitter Voltage Max:45V; Continuous Collector Current:100Ma; Power Dissipation:250Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:-; Dc Current Gain Hfe Min:125Hfe Rohs Compliant: Yes |Multicomp Pro BC847C
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: -; Power Dissipation Pd: 250mW; DC Collector Current: 100mA; DC Current Gain hFE: 125hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 2mA; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 420; No. of Transistors: 1; Noise Factor Max: 10dB; Power Dissipation Ptot Max: 250mW; SMD Marking: 1G; Termination Type: Surface Mount Device; Voltage Vcbo: 50V
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NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collect
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