BC847BVN-7

Diodes Incorporated BC847BVN-7

Part Number:
BC847BVN-7
Manufacturer:
Diodes Incorporated
Ventron No:
2461303-BC847BVN-7
Description:
TRANS NPN/PNP 45V 0.1A SOT563
ECAD Model:
Datasheet:
BC847BVN-7

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Specifications
Diodes Incorporated BC847BVN-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC847BVN-7.
  • Factory Lead Time
    19 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Number of Pins
    6
  • Weight
    3.005049mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Subcategory
    BIP General Purpose Small Signals
  • Max Power Dissipation
    150mW
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Frequency
    300MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC847BVN
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN, PNP
  • Element Configuration
    Dual
  • Power Dissipation
    150mW
  • Gain Bandwidth Product
    300MHz
  • Transistor Type
    NPN, PNP
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V / 220 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    45V
  • Transition Frequency
    300MHz
  • Collector Emitter Saturation Voltage
    600mV
  • Max Breakdown Voltage
    45V
  • Frequency - Transition
    300MHz 200MHz
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    6V
  • Height
    600μm
  • Length
    1.6mm
  • Width
    1.2mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
The BC847BVN-7 is a bipolar transistor array manufactured by Diodes Inc. It is designed for use in a variety of applications, including switching, amplification, and signal processing. The device Features a low collector-emitter saturation voltage, high gain, and low noise. It is also designed to be highly reliable and has a wide operating temperature range.

Features

• Low collector-emitter saturation voltage
• High gain
• Low noise
• High reliability
• Wide operating temperature range
• Low power consumption
• Low cost

Application

The BC847BVN-7 is suitable for a variety of applications, including:

• Switching
• Amplification
• Signal processing
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
BC847BVN-7 More Descriptions
Trans GP BJT NPN/PNP 45V 0.1A 150mW 6-Pin SOT-563 T/R / TRANS NPN/PNP 45V 0.1A SOT563
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon
BC847B Series NPN 150 W 45 V 100 mA SMT Small Signal Transistor - SOT-563
45V 150mW 100mA 1PCSNPN&1PCSPNP SOT-563 Bipolar Transistors - BJT ROHS
Transistor, NPN/PNP, SOT563; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:150mW; DC
Transistor, Npn & Pnp, Dual, 45V, 100Ma, 150Mw, Sot-563; Transistor Polarity:Complementary Npn And Pnp; Collector Emitter Voltage Max Npn:45V; Collector Emitter Voltage Max Pnp:45V; Continuous Collector Current Npn:100Ma Rohs Compliant: Yes |Diodes Inc. BC847BVN-7
TRANSISTOR, NPN/PNP, SOT563; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 200; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal; Transition Frequency ft: 300MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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