Diodes Incorporated BC847BVN-7
- Part Number:
- BC847BVN-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2461303-BC847BVN-7
- Description:
- TRANS NPN/PNP 45V 0.1A SOT563
- Datasheet:
- BC847BVN-7
Diodes Incorporated BC847BVN-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC847BVN-7.
- Factory Lead Time19 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- Weight3.005049mg
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- SubcategoryBIP General Purpose Small Signals
- Max Power Dissipation150mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Frequency300MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC847BVN
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation150mW
- Gain Bandwidth Product300MHz
- Transistor TypeNPN, PNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V / 220 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage45V
- Frequency - Transition300MHz 200MHz
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- Height600μm
- Length1.6mm
- Width1.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The BC847BVN-7 is a bipolar transistor array manufactured by Diodes Inc. It is designed for use in a variety of applications, including switching, amplification, and signal processing. The device Features a low collector-emitter saturation voltage, high gain, and low noise. It is also designed to be highly reliable and has a wide operating temperature range.
Features
• Low collector-emitter saturation voltage
• High gain
• Low noise
• High reliability
• Wide operating temperature range
• Low power consumption
• Low cost
Application
The BC847BVN-7 is suitable for a variety of applications, including:
• Switching
• Amplification
• Signal processing
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
Features
• Low collector-emitter saturation voltage
• High gain
• Low noise
• High reliability
• Wide operating temperature range
• Low power consumption
• Low cost
Application
The BC847BVN-7 is suitable for a variety of applications, including:
• Switching
• Amplification
• Signal processing
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
BC847BVN-7 More Descriptions
Trans GP BJT NPN/PNP 45V 0.1A 150mW 6-Pin SOT-563 T/R / TRANS NPN/PNP 45V 0.1A SOT563
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon
BC847B Series NPN 150 W 45 V 100 mA SMT Small Signal Transistor - SOT-563
45V 150mW 100mA 1PCSNPN&1PCSPNP SOT-563 Bipolar Transistors - BJT ROHS
Transistor, NPN/PNP, SOT563; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:150mW; DC
Transistor, Npn & Pnp, Dual, 45V, 100Ma, 150Mw, Sot-563; Transistor Polarity:Complementary Npn And Pnp; Collector Emitter Voltage Max Npn:45V; Collector Emitter Voltage Max Pnp:45V; Continuous Collector Current Npn:100Ma Rohs Compliant: Yes |Diodes Inc. BC847BVN-7
TRANSISTOR, NPN/PNP, SOT563; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 200; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal; Transition Frequency ft: 300MHz
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon
BC847B Series NPN 150 W 45 V 100 mA SMT Small Signal Transistor - SOT-563
45V 150mW 100mA 1PCSNPN&1PCSPNP SOT-563 Bipolar Transistors - BJT ROHS
Transistor, NPN/PNP, SOT563; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:150mW; DC
Transistor, Npn & Pnp, Dual, 45V, 100Ma, 150Mw, Sot-563; Transistor Polarity:Complementary Npn And Pnp; Collector Emitter Voltage Max Npn:45V; Collector Emitter Voltage Max Pnp:45V; Continuous Collector Current Npn:100Ma Rohs Compliant: Yes |Diodes Inc. BC847BVN-7
TRANSISTOR, NPN/PNP, SOT563; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 290hFE; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 200; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal; Transition Frequency ft: 300MHz
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