Nexperia USA Inc. BC847BV,115
- Part Number:
- BC847BV,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3068254-BC847BV,115
- Description:
- TRANS 2NPN 45V 0.1A SOT666
- Datasheet:
- BC847BV,115
Nexperia USA Inc. BC847BV,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847BV,115.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Number of Pins6
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Power Dissipation300mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC847BV
- Pin Count6
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Transistor Type2 NPN (Dual)
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage300mV
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- Height600μm
- Length1.7mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Nexperia Transistors - Bipolar (BJT) - Arrays BC847BV,115 are a type of transistor array designed for use in a variety of applications. These transistors are designed to provide high performance and reliability in a small package. They feature two NPN transistors with a maximum voltage of 45V and a maximum current of 0.1A. The transistors are housed in a SOT666 package, making them ideal for use in space-constrained applications.
Features
• Two NPN transistors
• Maximum voltage of 45V
• Maximum current of 0.1A
• Housed in a SOT666 package
• High performance and reliability
• Ideal for space-constrained applications
Application
Nexperia Transistors - Bipolar (BJT) - Arrays BC847BV,115 are suitable for a variety of applications, including power management, audio amplifiers, and motor control. They are also suitable for use in automotive, industrial, and consumer electronics.
Features
• Two NPN transistors
• Maximum voltage of 45V
• Maximum current of 0.1A
• Housed in a SOT666 package
• High performance and reliability
• Ideal for space-constrained applications
Application
Nexperia Transistors - Bipolar (BJT) - Arrays BC847BV,115 are suitable for a variety of applications, including power management, audio amplifiers, and motor control. They are also suitable for use in automotive, industrial, and consumer electronics.
BC847BV,115 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
45V 200mW 100mA NPN SOT-666 Bipolar Transistors - BJT ROHS
BC847 Series 45 V 100 mA NPN General Purpose Double Transistor - SOT-666
Trans GP BJT NPN 45V 0.1A Automotive 6-Pin SOT-666 T/R
BC847BV - NPN general purpose double transistor
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-666; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 250mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-666; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Continuous Collector Current Ic Max: 100A; Current Ic Continuous a Max: 100A; Current Ic hFE: 2mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 200; Module Configuration: Dual; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 300mW; Power Dissipation per device Max: 200mW; SMD Marking: 1F; Transition Frequency ft: 100MHz; Voltage Vcbo: 50V
45V 200mW 100mA NPN SOT-666 Bipolar Transistors - BJT ROHS
BC847 Series 45 V 100 mA NPN General Purpose Double Transistor - SOT-666
Trans GP BJT NPN 45V 0.1A Automotive 6-Pin SOT-666 T/R
BC847BV - NPN general purpose double transistor
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-666; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 250mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-666; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Continuous Collector Current Ic Max: 100A; Current Ic Continuous a Max: 100A; Current Ic hFE: 2mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 200; Module Configuration: Dual; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 300mW; Power Dissipation per device Max: 200mW; SMD Marking: 1F; Transition Frequency ft: 100MHz; Voltage Vcbo: 50V
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