BC847BV,115

Nexperia USA Inc. BC847BV,115

Part Number:
BC847BV,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
3068254-BC847BV,115
Description:
TRANS 2NPN 45V 0.1A SOT666
ECAD Model:
Datasheet:
BC847BV,115

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Specifications
Nexperia USA Inc. BC847BV,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC847BV,115.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Number of Pins
    6
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Max Power Dissipation
    300mW
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    100MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    BC847BV
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    300mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Transistor Type
    2 NPN (Dual)
  • Collector Emitter Voltage (VCEO)
    45V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    45V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    300mV
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • Height
    600μm
  • Length
    1.7mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Nexperia Transistors - Bipolar (BJT) - Arrays BC847BV,115 are a type of transistor array designed for use in a variety of applications. These transistors are designed to provide high performance and reliability in a small package. They feature two NPN transistors with a maximum voltage of 45V and a maximum current of 0.1A. The transistors are housed in a SOT666 package, making them ideal for use in space-constrained applications.

Features

• Two NPN transistors
• Maximum voltage of 45V
• Maximum current of 0.1A
• Housed in a SOT666 package
• High performance and reliability
• Ideal for space-constrained applications

Application

Nexperia Transistors - Bipolar (BJT) - Arrays BC847BV,115 are suitable for a variety of applications, including power management, audio amplifiers, and motor control. They are also suitable for use in automotive, industrial, and consumer electronics.
BC847BV,115 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
45V 200mW 100mA NPN SOT-666 Bipolar Transistors - BJT ROHS
BC847 Series 45 V 100 mA NPN General Purpose Double Transistor - SOT-666
Trans GP BJT NPN 45V 0.1A Automotive 6-Pin SOT-666 T/R
BC847BV - NPN general purpose double transistor
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:100mA ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-666; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 250mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-666; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Continuous Collector Current Ic Max: 100A; Current Ic Continuous a Max: 100A; Current Ic hFE: 2mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 200; Module Configuration: Dual; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 300mW; Power Dissipation per device Max: 200mW; SMD Marking: 1F; Transition Frequency ft: 100MHz; Voltage Vcbo: 50V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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