Diodes Incorporated BC847BS-7-F

Name: BC847BS-7-F
Brand: Diodes Incorporated
SKU: 3068153-BC847BS-7-F
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847BS-7-F

Manufacturer:: Diodes Incorporated

Ventron No:: 3068153-BC847BS-7-F

Description:: TRANS 2NPN 45V 0.1A SOT363

ECAD Model:

Datasheet:: BC847BS-7-F

Specifications

Diodes Incorporated BC847BS-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BC847BS-7-F.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
200mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC847BS
Pin Count
6
Number of Elements
2
Polarity
NPN
Voltage
45V
Element Configuration
Dual
Current
1A
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Transistor Type
2 NPN (Dual)
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
100mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description:

The BC847BS-7-F is a NPN/NPN transistor array from Diodes Inc. It is housed in a SOT363 package and is designed for use in low-power switching and amplifier applications. It features a low collector-emitter saturation voltage, high current gain, and low noise.

Features:

• Low collector-emitter saturation voltage
• High current gain
• Low noise
• SOT363 package
• NPN/NPN transistor array
• High switching speed
• High input impedance
• Low power consumption

Applications:

The BC847BS-7-F is suitable for use in a variety of applications, including:
• Low-power switching
• Amplifiers
• Low-noise amplifiers
• Audio amplifiers
• Motor control
• Power management
• Automotive electronics
• Industrial electronics

BC847BS-7-F More Descriptions

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TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:400mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; Package / Case:SOT-363; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Small Signal

Certification