ON Semiconductor BC847BPDW1T1G

Name: BC847BPDW1T1G
Brand: ON Semiconductor
SKU: 3584767-BC847BPDW1T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847BPDW1T1G

Manufacturer:: ON Semiconductor

Ventron No:: 3584767-BC847BPDW1T1G

Description:: TRANS NPN/PNP 45V 0.1A SOT363

ECAD Model:

Datasheet:: BC847BPDW1T1G

Specifications

ON Semiconductor BC847BPDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC847BPDW1T1G.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
45V
Max Power Dissipation
380mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC847BPD
Pin Count
6
Output Voltage
5V
Number of Elements
2
Polarity
NPN, PNP
Element Configuration
Dual
Power Dissipation
380mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Transistor Type
NPN, PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
150
Height
900μm
Length
2mm
Width
1.25mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description:
The BC847BPDW1T1G is a NPN/PNP Bipolar Transistor Array from ON Semiconductor. It is a low voltage, low current device with a maximum collector-emitter voltage of 45V and a maximum collector current of 0.1A. It is housed in a SOT363 package.

Features:
• Low voltage, low current
• Maximum collector-emitter voltage of 45V
• Maximum collector current of 0.1A
• SOT363 package

Applications:
• Switching
• Amplification
• Level shifting
• Motor control
• Power management

BC847BPDW1T1G More Descriptions

Trans GP BJT NPN/PNP 45V 0.1A 380mW Automotive 6-Pin SOT-363 T/R
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ON Semi BC847BPDW1T1G Dual NPN PNP Bipolar Transistor, 0.1 A, 45 V, 6-Pin SC-88 | ON Semiconductor BC847BPDW1T1G
45V 380mW 200@2mA,5V 100mA 1PCSNPN&1PCSPNP SOT-323-6 Bipolar Transistors - BJT ROHS
TRANSISTOR/PNP/NPN SS 45V 100MA SC70-6 H
TRANSISTOR,NPNPNP,SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: -; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; RF Transistor Case: SOT-363; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Collector Current Ic: 100mA; Gain Bandwidth ft Typ: 100MHz; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Transistor Case Style: SOT-363
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Transistor, Npn/Pnp, 100Mhz, Sot-363-6; Transistor Polarity:Npn, Pnp; Collector Emitter Voltage Max:45V; Transition Frequency:100Mhz; Power Dissipation:380Mw; Continuous Collector Current:100Ma; No. Of Pins:6Pins; Product Range:- Rohs Compliant: Yes |Onsemi BC847BPDW1T1G.

Certification