ON Semiconductor BC847BDW1T1G

Name: BC847BDW1T1G
Brand: ON Semiconductor
SKU: 2460685-BC847BDW1T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC847BDW1T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2460685-BC847BDW1T1G

Description:: TRANS 2NPN 45V 0.1A SOT363

ECAD Model:

Datasheet:: BC847BDW1T1G

Specifications

ON Semiconductor BC847BDW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC847BDW1T1G.

Lifecycle Status
ACTIVE (Last Updated: 15 hours ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
380mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC847BD
Pin Count
6
Number of Elements
2
Polarity
NPN
Element Configuration
Dual
Power Dissipation
380mW
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Transistor Type
2 NPN (Dual)
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
600mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Height
900μm
Length
2mm
Width
1.25mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The ON Semiconductor BC847BDW1T1G is a bipolar transistor array in a SOT363 package. It is a two-transistor array with a maximum collector-emitter voltage of 45V and a maximum collector current of 0.1A. This device is ideal for use in low-power applications such as switching, amplifying, and signal processing. It is designed to provide high performance and reliability in a small package. The BC847BDW1T1G is RoHS compliant and is suitable for use in a wide range of applications.

BC847BDW1T1G More Descriptions

ON Semi BC847BDW1T1G Dual NPN Bipolar Transistor; 0.1 A; 45 V; 6-Pin SC-88
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
BC Series 45 V 100 mA SMT NPN Silicon Dual General Purpose Transistor - SOT-363
45V 380mW 200@2mA,5V 100mA 2 NPN SOT-323-6 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 45V 0.1A 380mW Automotive 6-Pin SC-88 T/R
These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.
Bipolar Transistor, Npn, Dual, 45V, Sot363, Full Reel; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:45V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current Npn:100Ma; Power Dissipation Npn:380Mw Rohs Compliant: Yes |Onsemi BC847BDW1T1G
TRANSISTOR, NPN, 45V, 100MA, SOT-363-6; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 45V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: BCxxx Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Transition Frequency ft: 100MHz

Certification