Nexperia USA Inc. BC846BPN,115

Name: BC846BPN,115
Brand: Nexperia USA Inc.
SKU: 2460650-BC846BPN,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC846BPN,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2460650-BC846BPN,115

Description:: TRANS NPN/PNP 65V 0.1A 6TSSOP

ECAD Model:

Datasheet:: BC846BPN,115

Specifications

Nexperia USA Inc. BC846BPN,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC846BPN,115.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Max Power Dissipation
300mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
BC846BP
Pin Count
6
Number of Elements
2
Polarity
NPN, PNP
Element Configuration
Dual
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Transistor Type
NPN, PNP
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Max Junction Temperature (Tj)
150°C
Ambient Temperature Range High
150°C
Height
1.1mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The Nexperia BC846BPN,115 is a bipolar transistor array designed for use in a variety of applications. This device is a 56BS/SOT363/NPN transistor array, which is a type of transistor that uses both electrons and holes to control current flow. It is designed to provide high switching speeds and low power consumption. The BC846BPN,115 is suitable for use in a wide range of applications, including power management, audio amplifiers, and motor control.

Features

• 56BS/SOT363/NPN transistor array
• High switching speeds
• Low power consumption
• High current gain
• Low noise
• High reliability
• RoHS compliant

Application

• Power management
• Audio amplifiers
• Motor control
• Automotive
• Industrial
• Consumer electronics

BC846BPN,115 More Descriptions

BC846BPN - 65 V, 100 mA NPN/PNP general-purpose transistor
Trans GP BJT NPN/PNP 65V 0.1A 300mW Automotive 6-Pin TSSOP T/R
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Bipolar Transistors - BJT TRANSISTOR 56BS/SOT363/
65V 300mW 100mA 100MHz 200mV@100mA,5mA 1 NPN,1 PNP 150¡æ@(Tj) SOT-363 Bipolar Transistors - BJT ROHS
TRANS NPN/PNP 65V 100MA 6TSSOP
TRANSISTOR, ARRAY, NPN/PNP, 65V, 100mA, SOT-363-6; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; No. of Pins:6 ;RoHS Compliant: Yes
Transistor Polarity = PNP / Transistor Polarity = NPN / Configuration = Dual Common Anode / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 450 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 200 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1

Certification