ON BC846ALT1G
- Part Number:
- BC846ALT1G
- Manufacturer:
- ON
- Ventron No:
- 5533967-BC846ALT1G
- Description:
- passive components in stock
- Datasheet:
- BC846ALT1G
ON BC846ALT1G technical specifications, attributes, parameters and parts with similar specifications to ON BC846ALT1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC65V
- Max Power Dissipation300mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)65V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage65V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage600mV
- Max Breakdown Voltage65V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)6V
- hFE Min110
- Height940μm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC846ALT1G Description
ON Semiconductor's BC846ALT1G is an NPN-C 0A1 65V electrical component available in TO-236-3, SC-59, and SOT-23-3 packages. The BC846ALT1G datasheet states that it can be used in automotive, linear, and switching applications.
BC846ALT1G Features
Moisture Sensitivity Level: 1
ESD Rating ? Human Body Model: > 4000 V
? Machine Model: > 400 V These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
BC846ALT1G Applications
Automotive
Linear application
Switching application
ON Semiconductor's BC846ALT1G is an NPN-C 0A1 65V electrical component available in TO-236-3, SC-59, and SOT-23-3 packages. The BC846ALT1G datasheet states that it can be used in automotive, linear, and switching applications.
BC846ALT1G Features
Moisture Sensitivity Level: 1
ESD Rating ? Human Body Model: > 4000 V
? Machine Model: > 400 V These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
BC846ALT1G Applications
Automotive
Linear application
Switching application
BC846ALT1G More Descriptions
Trans General Purpose BJT NPN 65 Volt 0.1A 3-Pin SOT-23 Tape and Reel
TRANS NPN 65V 0.1A SOT23 / Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R
65V 300mW 110@2mA,5V 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
ON Semi BC846ALT1G NPN Bipolar Transistor, 0.1 A, 65 V, 3-Pin SOT-23 | ON Semiconductor BC846ALT1G
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
BC846ALT1G Series 65 V 100 mA Surface Mount General Purpose Transistor - SOT-23
Transistor, NPN, 65V, 100MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power
Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:100Mhzrohs Compliant: Yes |Onsemi BC846ALT1G.
TRANSISTOR, NPN, 65V, 100MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 100mA; DC Current Gain hFE: 110hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
TRANS NPN 65V 0.1A SOT23 / Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R
65V 300mW 110@2mA,5V 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS
ON Semi BC846ALT1G NPN Bipolar Transistor, 0.1 A, 65 V, 3-Pin SOT-23 | ON Semiconductor BC846ALT1G
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
BC846ALT1G Series 65 V 100 mA Surface Mount General Purpose Transistor - SOT-23
Transistor, NPN, 65V, 100MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:100MHz; Power
Bipolar Transistor, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:65V; Continuous Collector Current:100Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:100Mhzrohs Compliant: Yes |Onsemi BC846ALT1G.
TRANSISTOR, NPN, 65V, 100MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 65V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 100mA; DC Current Gain hFE: 110hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
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