Nexperia USA Inc. BC817DPN,115
- Part Number:
- BC817DPN,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2460655-BC817DPN,115
- Description:
- TRANS NPN/PNP 45V 0.5A 6TSOP
- Datasheet:
- BC817DPN,115
Nexperia USA Inc. BC817DPN,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC817DPN,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC817DPN
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- PolarityNPN, PNP
- ConfigurationSEPARATE, 2 ELEMENTS
- Power - Max600mW
- Transistor ApplicationSWITCHING
- Transistor TypeNPN, PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency100MHz
- Frequency - Transition100MHz 80MHz
- RoHS StatusROHS3 Compliant
Description:
The BC817DPN,115 is a 6-pin Transistor Array from Nexperia. It is a bipolar junction transistor (BJT) array that consists of two NPN and two PNP transistors. It has a maximum collector-emitter voltage of 45V and a maximum collector current of 0.5A.
Features:
• Maximum collector-emitter voltage of 45V
• Maximum collector current of 0.5A
• Low saturation voltage
• Low noise
• High gain
• High switching speed
• 6-pin TSOP package
Applications:
The BC817DPN,115 is suitable for a wide range of applications, including power management, audio amplifiers, motor control, and signal switching. It is also suitable for use in automotive, industrial, and consumer electronics.
The BC817DPN,115 is a 6-pin Transistor Array from Nexperia. It is a bipolar junction transistor (BJT) array that consists of two NPN and two PNP transistors. It has a maximum collector-emitter voltage of 45V and a maximum collector current of 0.5A.
Features:
• Maximum collector-emitter voltage of 45V
• Maximum collector current of 0.5A
• Low saturation voltage
• Low noise
• High gain
• High switching speed
• 6-pin TSOP package
Applications:
The BC817DPN,115 is suitable for a wide range of applications, including power management, audio amplifiers, motor control, and signal switching. It is also suitable for use in automotive, industrial, and consumer electronics.
BC817DPN,115 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon
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Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:370mW; DC Collector Current:500mA ;RoHS Compliant: Yes
Transistor Polarity = PNP / Transistor Polarity = NPN / Configuration = Dual / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 400 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 600 / Package Type = SOT-457 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 700 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.2
Trans GP BJT NPN/PNP 45V 0.5A 600mW Automotive 6-Pin TSOP T/R
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BJT ARRAY, NPN & PNP, 45V, 500MA, 6-SOT-457
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:370mW; DC Collector Current:500mA ;RoHS Compliant: Yes
Transistor Polarity = PNP / Transistor Polarity = NPN / Configuration = Dual / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 400 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 600 / Package Type = SOT-457 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 700 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.2
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