Fairchild/ON Semiconductor BC638

Name: BC638
Brand: Fairchild/ON Semiconductor
SKU: 2467322-BC638
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC638

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2467322-BC638

Description:: TRANS PNP 60V 1A TO-92

ECAD Model:

Datasheet:: BC638, 640, 640-16

Specifications

Fairchild/ON Semiconductor BC638 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC638.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
100MHz
Frequency - Transition
150MHz
RoHS Status
Non-RoHS Compliant

Description

BC638 Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.

BC638 Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz

BC638 Applications
There are a lot of Rochester Electronics, LLC
BC638 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC638 More Descriptions

Bulk Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 150mA 2V 500mA 625mW 100MHz
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Transistor PNP BC638 ON SEMI Ampere=1 V=60 TO92

Certification