ON Semiconductor BAT54CLT1G
- Part Number:
- BAT54CLT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3812444-BAT54CLT1G
- Description:
- DIODE ARRAY SCHOTTKY 30V SOT23-3
- Datasheet:
- BAT54CLT1G
ON Semiconductor BAT54CLT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAT54CLT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Diode Element MaterialSILICON
- PackagingCut Tape (CT)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature125°C
- Min Operating Temperature-55°C
- HTS Code8541.10.00.70
- Capacitance10pF
- SubcategoryRectifier Diodes
- Voltage - Rated DC30V
- Max Power Dissipation225mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBAT54CL
- Pin Count3
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedSmall Signal =< 200mA (Io), Any Speed
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr2μA @ 25V
- Power Dissipation225mW
- Voltage - Forward (Vf) (Max) @ If800mV @ 100mA
- Forward Current200mA
- Max Reverse Leakage Current2μA
- Operating Temperature - Junction-55°C~125°C
- Max Surge Current600mA
- Output Current-Max0.1A
- Halogen FreeHalogen Free
- Current - Average Rectified (Io)200mA DC
- Forward Voltage800mV
- Max Reverse Voltage (DC)30V
- Average Rectified Current200mA
- Reverse Recovery Time5 ns
- Peak Reverse Current2μA
- Max Repetitive Reverse Voltage (Vrrm)30V
- Peak Non-Repetitive Surge Current600mA
- Diode Configuration1 Pair Common Cathode
- Max Forward Surge Current (Ifsm)600mA
- Recovery Time5 ns
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BAT54CLT1G Overview
In this case, the forward voltage has to be set at 800mV to operate the device.An output voltage of 0.1A is the maximum it can handle.Maintaining a surge current under 600mA and not letting it exceed it is the key to preventing it.In this case, the forward voltage has to be set at 200mA to operate the device.This part can draw 200mA current.In this device, there are approximately 10pF farads of capacitance.A reverse voltage peak of 2μA is applied to devices like this one.A semiconductor device's maximum reverse leakage current is 2μA, which is the current created by its reverse bias.Electronics and electrical devices create heat as a byproduct of their primary action.225mW heat is generated at the highest rate from this electronic or electrical device (energy waste).
BAT54CLT1G Features
800mV forward voltage
a maximum output voltage of 0.1A
10pF farads
a peak voltage of 2μA
a reverse voltage peak of 2μA
BAT54CLT1G Applications
There are a lot of ON Semiconductor
BAT54CLT1G applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
In this case, the forward voltage has to be set at 800mV to operate the device.An output voltage of 0.1A is the maximum it can handle.Maintaining a surge current under 600mA and not letting it exceed it is the key to preventing it.In this case, the forward voltage has to be set at 200mA to operate the device.This part can draw 200mA current.In this device, there are approximately 10pF farads of capacitance.A reverse voltage peak of 2μA is applied to devices like this one.A semiconductor device's maximum reverse leakage current is 2μA, which is the current created by its reverse bias.Electronics and electrical devices create heat as a byproduct of their primary action.225mW heat is generated at the highest rate from this electronic or electrical device (energy waste).
BAT54CLT1G Features
800mV forward voltage
a maximum output voltage of 0.1A
10pF farads
a peak voltage of 2μA
a reverse voltage peak of 2μA
BAT54CLT1G Applications
There are a lot of ON Semiconductor
BAT54CLT1G applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
BAT54CLT1G More Descriptions
Rectifier Diode Schottky 0.2A 5ns 3-Pin SOT-23 T/R / DIODE ARRAY SCHOTTKY 30V SOT23-3
Diode,Schottky Barrier,Fast,Vr 30V,If 200mA,Pkg SOT-23 (TO-236),Vf 0.52VDC
Rectifier Diode, Schottky, 1 Phase, 2 Element, 0.1A, 30V V(RRM), Silicon, TO-236
BAT54CL Series 30 V Surface Mount Schottky Barrier Diodes - SOT-23
30V Dual Common Cathode 800mV@100mA 200mA SOT-23(TO-236) Schottky Barrier Diodes (SBD) ROHS
200 mA, 30 V, Dual Schottky Diode, Common Cathode
Schottky Rectifier, Common Cathode 0.2A Sot-23, Full Reel; Diode Configuration:Dual Common Cathode; Repetitive Peak Reverse Voltage:40V; Average Forward Current:100Ma; Forward Voltage Max:800Mv; Forward Surge Current:600Ma Rohs Compliant: Yes |Onsemi BAT54CLT1G.
These Schottky barrier diodes are designed for high speed switching applications circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
DIODE, ULTRAFAST, 100MA, 30V, SOT-23-3; Diode Configuration: Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max: 30V; Forward Current If(AV): 100mA; Forward Voltage VF Max: 800mV; Forward Surge Current Ifsm Max: 600mA; Operating Temperature Max: 125°C; Diode Case Style: SOT-23; No. of Pins: 3Pins; Product Range: BAT54 Series; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (27-Jun-2018); Diode Type: Ultrafast Recovery; Operating Temperature Min: -55°C; Reverse Recovery Time trr Max: 5ns
Diode,Schottky Barrier,Fast,Vr 30V,If 200mA,Pkg SOT-23 (TO-236),Vf 0.52VDC
Rectifier Diode, Schottky, 1 Phase, 2 Element, 0.1A, 30V V(RRM), Silicon, TO-236
BAT54CL Series 30 V Surface Mount Schottky Barrier Diodes - SOT-23
30V Dual Common Cathode 800mV@100mA 200mA SOT-23(TO-236) Schottky Barrier Diodes (SBD) ROHS
200 mA, 30 V, Dual Schottky Diode, Common Cathode
Schottky Rectifier, Common Cathode 0.2A Sot-23, Full Reel; Diode Configuration:Dual Common Cathode; Repetitive Peak Reverse Voltage:40V; Average Forward Current:100Ma; Forward Voltage Max:800Mv; Forward Surge Current:600Ma Rohs Compliant: Yes |Onsemi BAT54CLT1G.
These Schottky barrier diodes are designed for high speed switching applications circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
DIODE, ULTRAFAST, 100MA, 30V, SOT-23-3; Diode Configuration: Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max: 30V; Forward Current If(AV): 100mA; Forward Voltage VF Max: 800mV; Forward Surge Current Ifsm Max: 600mA; Operating Temperature Max: 125°C; Diode Case Style: SOT-23; No. of Pins: 3Pins; Product Range: BAT54 Series; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (27-Jun-2018); Diode Type: Ultrafast Recovery; Operating Temperature Min: -55°C; Reverse Recovery Time trr Max: 5ns
The three parts on the right have similar specifications to BAT54CLT1G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsDiode Element MaterialPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureHTS CodeCapacitanceSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrPower DissipationVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentOutput Current-MaxHalogen FreeCurrent - Average Rectified (Io)Forward VoltageMax Reverse Voltage (DC)Average Rectified CurrentReverse Recovery TimePeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Peak Non-Repetitive Surge CurrentDiode ConfigurationMax Forward Surge Current (Ifsm)Recovery TimeHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishJESD-30 CodeQualification StatusOperating Temperature (Max)Power Dissipation-MaxVoltage - DC Reverse (Vr) (Max)Rep Pk Reverse Voltage-MaxNon-rep Pk Forward Current-MaxMountWeightTerminationAdditional FeaturePower RatingSeriesView Compare
-
BAT54CLT1GACTIVE (Last Updated: 4 days ago)4 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICONCut Tape (CT)2005e3yesActive1 (Unlimited)3EAR99125°C-55°C8541.10.00.7010pFRectifier Diodes30V225mWDUALGULL WING260200mA40BAT54CL32Common CathodeSmall Signal =< 200mA (Io), Any SpeedSchottky2μA @ 25V225mW800mV @ 100mA200mA2μA-55°C~125°C600mA0.1AHalogen Free200mA DC800mV30V200mA5 ns2μA30V600mA1 Pair Common Cathode600mA5 ns1.01mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------------
-
-12 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3YES-SILICONTape & Reel (TR)2005e3yesActive1 (Unlimited)3EAR99--8541.10.00.70-Rectifier Diodes--DUALGULL WING260-10BAT54C32-Small Signal =< 200mA (Io), Any SpeedSchottky2μA @ 25V-1V @ 100mA---55°C~125°C-0.2A-200mA DC---5ns---1 Pair Common Cathode-------ROHS3 Compliant-Matte Tin (Sn)R-PDSO-G3Not Qualified125°C0.2W30V30V0.6A------
-
---Surface MountTO-236-3, SC-59, SOT-23-3-3SILICONTape & Reel (TR)-e3yesDiscontinued1 (Unlimited)3EAR99150°C-65°C8541.10.00.7010pFRectifier Diodes30V200mWDUALGULL WING260200mA40BAT54C32Common CathodeSmall Signal =< 200mA (Io), Any SpeedSchottky2μA @ 25V-800mV @ 100mA200mA--65°C~150°C-0.2A-200mA DC800mV30V200mA5 ns2μA30V600mA1 Pair Common Cathode600mA-1mm2.9mm1.3mm--Non-RoHS CompliantContains LeadMatte Tin (Sn)-Not Qualified-----Surface Mount200.998119mgSMD/SMTHIGH RELIABILITY200mW-
-
-15 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3-3SILICONTape & Reel (TR)-e3yesActive1 (Unlimited)3EAR99125°C-55°C8541.10.00.70-Rectifier Diodes-230mWDUALGULL WING260-10-32Common AnodeSmall Signal =< 200mA (Io), Any SpeedSchottky2μA @ 25V-800mV @ 100mA200mA-125°C Max-0.2A-200mA DC800mV30V200mA5 ns2μA30V600mA1 Pair Common Anode600mA------ROHS3 Compliant-Matte Tin (Sn)-------Surface Mount8.788352mg---Automotive, AEC-Q101
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
23 April 2024
LM331 Frequency to Voltage Converter Functions, Working Principle and Application Circuit
Ⅰ. LM331 descriptionⅡ. Functions and roles of LM331Ⅲ. LM331 internal block diagramⅣ. Working principle of LM331Ⅴ. Application circuit of LM331Ⅵ. Specific applications of LM331Ⅶ. Precautions for using LM331The... -
24 April 2024
MBRS340T3G Schottky Diode: Specifications, Highlights, Structure and Features
Ⅰ. Overview of MBRS340T3GⅡ. Geometric structure of MBRS340T3GⅢ. Specifications of MBRS340T3GⅣ. Highlights of MBRS340T3GⅤ. MBRS340T3G typical electrical characteristicsⅥ. Features of MBRS340T3GⅦ. How to use and install MBRS340T3G correctly?Ⅰ.... -
24 April 2024
MC34063 Regulator Pinout, Working Principle and Advantages
Ⅰ. What is MC34063?Ⅱ. Pin diagram and functions of MC34063Ⅲ. How does MC34063 work?Ⅳ. MC34063 boost circuit calculation methodⅤ. MC34063 step-down switching circuitⅥ. Voltage reverse circuit composed of... -
25 April 2024
STM32F407ZET6 Microcontroller: Characteristics, Highlights and STM32F407ZET6 vs STM32F407VET6
Ⅰ. Description of STM32F103ZET6Ⅱ. Naming rules of STM32F103ZET6Ⅲ. What are the characteristics of STM32F103ZET6?Ⅳ. How to optimize the program performance of STM32F103ZET6?Ⅴ. Highlights of STM32F103ZET6Ⅵ. Minimum system of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.