BAS35

Fairchild/ON Semiconductor BAS35

Part Number:
BAS35
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2822351-BAS35
Description:
DIODE ARRAY GP 120V 200MA SOT23
ECAD Model:
Datasheet:
BAS35

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Specifications
Fairchild/ON Semiconductor BAS35 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BAS35.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    42 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    25mg
  • Diode Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • HTS Code
    8541.10.00.70
  • Capacitance
    35pF
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    BAS35
  • Number of Elements
    2
  • Element Configuration
    Common Anode
  • Speed
    Small Signal =< 200mA (Io), Any Speed
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    100nA @ 90V
  • Power Dissipation
    350mW
  • Voltage - Forward (Vf) (Max) @ If
    1V @ 200mA
  • Forward Current
    200mA
  • Operating Temperature - Junction
    150°C Max
  • Max Surge Current
    2A
  • Forward Voltage
    1V
  • Max Reverse Voltage (DC)
    120V
  • Average Rectified Current
    200mA
  • Reverse Recovery Time
    50 ns
  • Peak Reverse Current
    100nA
  • Max Repetitive Reverse Voltage (Vrrm)
    120V
  • Peak Non-Repetitive Surge Current
    2A
  • Reverse Voltage
    120V
  • Diode Configuration
    1 Pair Common Anode
  • Max Forward Surge Current (Ifsm)
    1A
  • Recovery Time
    50 ns
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.2mm
  • Length
    2.92mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BAS35 Overview
This device will operate when the forward voltage is set to 1V.Surge currents should be monitored and prevented from exceeding 2A.This device will operate when the forward voltage is set to 200mA.This device has approximately 35pF farads of capacitance.A reverse voltage peak of 100nA is used to power devices like this one.Due to its primary action, this electronic or electrical device produces 350mW of heat (energy loss).

BAS35 Features
1V forward voltage
35pF farads
a peak voltage of 100nA
a reverse voltage peak of 100nA


BAS35 Applications
There are a lot of ON Semiconductor
BAS35 applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
BAS35 More Descriptions
Rectifier Diode Small Signal Switching 120V 0.2A 50ns 3-Pin SOT-23 T/R
Diode Array 1 Pair Common Anode Standard 120V 200mA Surface Mount TO-236-3, SC-59, SOT-23-3
BAS35 Series 120 V200 mA Surface Mount Small Signal Diode -SOT-23-3
Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon
DIODE, SMALL SIGNAL, 120V, SOT-23; Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:120V; Forward Current If(AV):200mA;
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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