ON Semiconductor BAS21SLT1G
- Part Number:
- BAS21SLT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2821608-BAS21SLT1G
- Description:
- DIODE ARRAY GP 250V 225MA SOT23
- ECAD Model:
-
- Datasheet:
- BAS21SLT1G
ON Semiconductor BAS21SLT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS21SLT1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Diode Element MaterialSILICON
- PackagingCut Tape (CT)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.10.00.70
- Capacitance5pF
- SubcategoryRectifier Diodes
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating225mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBAS21S
- Pin Count3
- Number of Elements2
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr100nA @ 200V
- Power Dissipation300mW
- Voltage - Forward (Vf) (Max) @ If1.25V @ 200mA
- Forward Current225mA
- Max Reverse Leakage Current1μA
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current625mA
- Output Current-Max0.225A
- Halogen FreeHalogen Free
- Current - Average Rectified (Io)225mA DC
- Forward Voltage1.25V
- Max Reverse Voltage (DC)250V
- Average Rectified Current225mA
- Reverse Recovery Time50 ns
- Peak Reverse Current100μA
- Max Repetitive Reverse Voltage (Vrrm)250V
- Peak Non-Repetitive Surge Current625mA
- Diode Configuration1 Pair Series Connection
- Max Forward Surge Current (Ifsm)625mA
- Recovery Time50 ns
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BAS21SLT1G Overview
When the forward voltage is set to 1.25V, this device will operate.Array is capable of supporting a maximum output voltage of 0.225A.Monarrayoring the surge current and preventing array from exceeding 625mA should be the rule.When the forward voltage is set to 225mA, this device will operate.A current of 225mA can be drawn from the part.Approximately 5pF farads of capacitance are found in this device.Devices like this one are powered with a reverse voltage peak of 100μA.Its maximal reverse leakage current is 1μA, which is the current from that semiconductor device when the device is reverse biased.This electronic or electrical device creates 300mW of heat (energy loss) as a derivative of its primary action.
BAS21SLT1G Features
1.25V forward voltage
a maximum output voltage of 0.225A
5pF farads
a peak voltage of 100μA
a reverse voltage peak of 100μA
BAS21SLT1G Applications
There are a lot of ON Semiconductor
BAS21SLT1G applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
When the forward voltage is set to 1.25V, this device will operate.Array is capable of supporting a maximum output voltage of 0.225A.Monarrayoring the surge current and preventing array from exceeding 625mA should be the rule.When the forward voltage is set to 225mA, this device will operate.A current of 225mA can be drawn from the part.Approximately 5pF farads of capacitance are found in this device.Devices like this one are powered with a reverse voltage peak of 100μA.Its maximal reverse leakage current is 1μA, which is the current from that semiconductor device when the device is reverse biased.This electronic or electrical device creates 300mW of heat (energy loss) as a derivative of its primary action.
BAS21SLT1G Features
1.25V forward voltage
a maximum output voltage of 0.225A
5pF farads
a peak voltage of 100μA
a reverse voltage peak of 100μA
BAS21SLT1G Applications
There are a lot of ON Semiconductor
BAS21SLT1G applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
BAS21SLT1G More Descriptions
Rectifier Diode Small Signal Switching 250V 0.225A 50ns 3-Pin SOT-23 T/R
250 V High Voltage Switching Diode, Dual, Series
Rectifier Diode, 1 Phase, 2 Element, 0.225A, 250V V(RRM), Silicon, TO-236AB
250V 300mW Dual 1.25V@200mA 50ns 225mA SOT-23(TO-236) Switching Diode ROHS
Diode Configuration:Single; Repetitive Peak Reverse Voltage:250V; Average Forward Current:200Ma; Forward Voltage Max:1.25V; Reverse Recovery Time:50Ns; Forward Surge Current:625Ma; Operating Temperature Max:150°C; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BAS21SLT1G.
250 V High Voltage Switching Diode, Dual, Series
Rectifier Diode, 1 Phase, 2 Element, 0.225A, 250V V(RRM), Silicon, TO-236AB
250V 300mW Dual 1.25V@200mA 50ns 225mA SOT-23(TO-236) Switching Diode ROHS
Diode Configuration:Single; Repetitive Peak Reverse Voltage:250V; Average Forward Current:200Ma; Forward Voltage Max:1.25V; Reverse Recovery Time:50Ns; Forward Surge Current:625Ma; Operating Temperature Max:150°C; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BAS21SLT1G.
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