ON Semiconductor BAS19LT1G

Name: BAS19LT1G
Brand: ON Semiconductor
SKU: 2420342-BAS19LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BAS19LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2420342-BAS19LT1G

Description:: DIODE GEN PURP 120V 200MA SOT23

ECAD Model:

Datasheet:: BAS19LT1G

Specifications

ON Semiconductor BAS19LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS19LT1G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.70
Capacitance
5pF
Subcategory
Rectifier Diodes
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BAS19
Pin Count
3
Number of Elements
1
Element Configuration
Single
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
100nA @ 100V
Power Dissipation
385mW
Output Current
200mA
Voltage - Forward (Vf) (Max) @ If
1.25V @ 200mA
Forward Current
200mA
Max Reverse Leakage Current
100nA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
625mA
Halogen Free
Halogen Free
Breakdown Voltage
120V
Current - Average Rectified (Io)
200mA DC
Forward Voltage
1.25V
Max Reverse Voltage (DC)
120V
Average Rectified Current
200mA
Reverse Recovery Time
50 ns
Peak Reverse Current
100nA
Max Repetitive Reverse Voltage (Vrrm)
120V
Capacitance @ Vr, F
5pF @ 0V 1MHz
Peak Non-Repetitive Surge Current
625mA
Max Forward Surge Current (Ifsm)
625mA
Recovery Time
50 ns
Height
940μm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BAS19LT1G Overview
In this device, the maximum reverse leakage current is 100nA volts.The average rectified current for this device is 200mA volts.The primary action of this electronic or electrical device produces no heat as an unwanted side effect.When the forward current reaches 200mA, it is allowed.The maximum surge current is 625mA.This device can deliver a value of 5pF depending on the capacitance.A data chart shows that the peak reverse is 100nA in the datasheets.Its breakdown voltage is 120V, which is the maximum reverse voltage that can be applied without exponentially increasing leakage current in the diode.

BAS19LT1G Features
a maximal reverse leakage current of 100nA volts
an average rectified current of 200mA volts
the peak reverse is 100nA
the breakdown voltage of a diode is 120V

BAS19LT1G Applications
There are a lot of ON Semiconductor
BAS19LT1G applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BAS19LT1G More Descriptions

Rectifier Diode Small Signal Switching 120V 0.2A 50ns 3-Pin SOT-23 T/R
Rectifier Diode, 1 Phase, 1 Element, 0.2A, 120V V(RRM), Silicon, TO-236AB
120V 385mW Single 1V@100mA 50ns 200mA SOT-23(TO-236) Switching Diode ROHS
DIODE, SMALL SIGNAL, 120V, SOT-23-3; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:120V; Forward Current If(AV):200mA;
DIODE, SMALL SIGNAL, 120V, SOT-23-3; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 120V; Forward Current If(AV): 200mA; Forward Voltage VF Max: 1.25V; Reverse Recovery Time trr Max: 50ns; Forward Surge Current Ifsm Max: 625mA; Operating Temperature Max: 150°C; Diode Case Style: SOT-23; No. of Pins: 3Pins; Product Range: BAS19 Series; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (27-Jun-2018); Diode Type: Fast Recovery; Operating Temperature Min: -55°C

Product Comparison

The three parts on the right have similar specifications to BAS19LT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Diode Element Material

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Capacitance

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Power Dissipation

Output Current

Voltage - Forward (Vf) (Max) @ If

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Halogen Free

Breakdown Voltage

Current - Average Rectified (Io)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Recovery Time

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Weight

Series

Published

Output Current-Max

Max Power Dissipation

View Compare
BAS19LT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

4 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

Cut Tape (CT)

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

5pF

Rectifier Diodes

DUAL

GULL WING

260

40

BAS19

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

100nA @ 100V

385mW

200mA

1.25V @ 200mA

200mA

100nA

-55°C~150°C

625mA

Halogen Free

120V

200mA DC

1.25V

120V

200mA

50 ns

100nA

120V

5pF @ 0V 1MHz

625mA

625mA

50 ns

940μm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
BAS16-HE3-18

Vishay Semiconductor Diodes Division

-

15 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

-

-

DUAL

GULL WING

260

10

-

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 75V

-

-

1.25V @ 150mA

150mA

-

-55°C~150°C

-

-

-

-

1.25V

75V

150mA

6 ns

-

75V

4pF @ 0V 1MHz

2A

-

-

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

8.788352mg

Automotive, AEC-Q101

2016

0.15A

-

BAS19LT1G vs BAS16-HE3-18
BAS116TT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Surface Mount

SC-75, SOT-416

YES

3

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

-

-

Rectifier Diodes

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

BAS116

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

5nA @ 75V

-

-

1.25V @ 150mA

200mA

80nA

-55°C~150°C

500mA

Halogen Free

-

-

-

75V

200mA

3 μs

5nA

75V

2pF @ 0V 1MHz

-

-

3 μs

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

0.2A

360mW

BAS19LT1G vs BAS116TT1G
BAS16-G3-08

Vishay Semiconductor Diodes Division

-

15 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

-

-

DUAL

GULL WING

260

10

-

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 75V

-

-

1.25V @ 150mA

150mA

-

-55°C~150°C

-

-

-

-

-

75V

150mA

6 ns

-

75V

4pF @ 0V 1MHz

2A

-

-

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

8.107964mg

Automotive, AEC-Q101

2014

0.15A

-

BAS19LT1G vs BAS16-G3-08