ON Semiconductor BAS16XV2T1G

Name: BAS16XV2T1G
Brand: ON Semiconductor
SKU: 2824416-BAS16XV2T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BAS16XV2T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2824416-BAS16XV2T1G

Description:: DIODE GEN PURP 75V 200MA SOD523

ECAD Model:

Datasheet:: BAS16XV2T1G

Specifications

ON Semiconductor BAS16XV2T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS16XV2T1G.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SC-79, SOD-523
Surface Mount
YES
Number of Pins
2
Diode Element Material
SILICON
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.70
Capacitance
2pF
Subcategory
Rectifier Diodes
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BAS16XV2
Pin Count
2
Number of Elements
1
Element Configuration
Single
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
1μA @ 100V
Power Dissipation
200mW
Output Current
200mA
Voltage - Forward (Vf) (Max) @ If
1.25V @ 150mA
Forward Current
200mA
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
500mA
Halogen Free
Halogen Free
Voltage - DC Reverse (Vr) (Max)
100V
Current - Average Rectified (Io)
200mA DC
Forward Voltage
1.25V
Max Reverse Voltage (DC)
75V
Average Rectified Current
200mA
Reverse Recovery Time
6 ns
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
75V
Capacitance @ Vr, F
2pF @ 0V 1MHz
Peak Non-Repetitive Surge Current
500mA
Max Forward Surge Current (Ifsm)
500mA
Recovery Time
6 ns
Height
700μm
Length
1.3mm
Width
900μm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BAS16XV2T1G Overview
A maximum reverse leakage current of 1μA volts is produced by this device.This device has an average rectified current of 200mA volts.As an unwanted derivative of its primary action, this electronic or electrical device produces 200mW heat.Forward current is allowed to reach a value of zero.Surge currents can be used up to 500mA.A value of 2pF can be delivered by the device depending on its capacitance.Datasheets indicate that the peak reverse is 1μA.

BAS16XV2T1G Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 200mA volts
the peak reverse is 1μA

BAS16XV2T1G Applications
There are a lot of ON Semiconductor
BAS16XV2T1G applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BAS16XV2T1G More Descriptions

Rectifier Diode Small Signal Switching 0.2A 6ns 2-Pin SOD-523 T/R
Rectifier Diode, 1 Phase, 1 Element, 0.2A, 100V V(RRM), Silicon
Diode,Schottky Barrier,Switching,Vr 75V,If 200mA,Pkg SOD-523,Vf 1250mV,Trr 6ns
BAS16XV2 75 V 200 mA Surface Mount Switching Diode - SOD-523

Product Comparison

The three parts on the right have similar specifications to BAS16XV2T1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Diode Element Material

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Capacitance

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Power Dissipation

Output Current

Voltage - Forward (Vf) (Max) @ If

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Halogen Free

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Recovery Time

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Weight

Published

Terminal Finish

Power Rating

Voltage - Rated DC

Max Power Dissipation

Reach Compliance Code

Current Rating

Qualification Status

Reverse Voltage (DC)

Series

Output Current-Max

View Compare
BAS16XV2T1G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

12 Weeks

Tin

Surface Mount

SC-79, SOD-523

YES

2

SILICON

Cut Tape (CT)

e3

yes

Active

1 (Unlimited)

2

EAR99

150°C

-55°C

8541.10.00.70

2pF

Rectifier Diodes

DUAL

FLAT

260

40

BAS16XV2

2

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 100V

200mW

200mA

1.25V @ 150mA

200mA

1μA

-55°C~150°C

500mA

Halogen Free

100V

200mA DC

1.25V

75V

200mA

6 ns

1μA

75V

2pF @ 0V 1MHz

500mA

500mA

6 ns

700μm

1.3mm

900μm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BAS116T-7

Diodes Incorporated

-

-

-

Surface Mount

SOT-523

-

3

SILICON

Tape & Reel (TR)

e0

-

Discontinued

1 (Unlimited)

3

EAR99

150°C

-65°C

8541.10.00.70

2pF

Rectifier Diodes

DUAL

GULL WING

235

10

BAS116

3

1

Single

Standard Recovery >500ns, > 200mA (Io)

Standard

5nA @ 75V

-

215mA

1.25V @ 150mA

215mA

-

-65°C~150°C

4A

-

-

215mA DC

1.25V

85V

215mA

3 μs

5nA

-

2pF @ 0V 1MHz

4A

-

3 μs

750μm

1.6mm

800μm

-

-

Non-RoHS Compliant

Contains Lead

Surface Mount

2.012816mg

2005

Tin/Lead (Sn85Pb15)

150mW

85V

150mW

not_compliant

215mA

Not Qualified

85V

-

-

BAS16XV2T1G vs BAS116T-7
BAS16-HE3-18

Vishay Semiconductor Diodes Division

-

15 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

-

-

DUAL

GULL WING

260

10

-

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 75V

-

-

1.25V @ 150mA

150mA

-

-55°C~150°C

-

-

-

-

1.25V

75V

150mA

6 ns

-

75V

4pF @ 0V 1MHz

2A

-

-

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

8.788352mg

2016

-

-

-

-

-

-

-

-

Automotive, AEC-Q101

0.15A

BAS16XV2T1G vs BAS16-HE3-18
BAS16-G3-08

Vishay Semiconductor Diodes Division

-

15 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

-

-

DUAL

GULL WING

260

10

-

3

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 75V

-

-

1.25V @ 150mA

150mA

-

-55°C~150°C

-

-

-

-

-

75V

150mA

6 ns

-

75V

4pF @ 0V 1MHz

2A

-

-

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

8.107964mg

2014

-

-

-

-

-

-

-

-

Automotive, AEC-Q101

0.15A

BAS16XV2T1G vs BAS16-G3-08