ON Semiconductor BAS116LT3G

Name: BAS116LT3G
Brand: ON Semiconductor
SKU: 2426285-BAS116LT3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BAS116LT3G

Manufacturer:: ON Semiconductor

Ventron No:: 2426285-BAS116LT3G

Description:: DIODE GEN PURP 75V 200MA SOT23-3

ECAD Model:

Datasheet:: BAS116LT3G

Specifications

ON Semiconductor BAS116LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BAS116LT3G.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.70
Subcategory
Rectifier Diodes
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BAS116
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
5nA @ 75V
Power Dissipation
300mW
Voltage - Forward (Vf) (Max) @ If
1.25V @ 150mA
Forward Current
200mA
Max Reverse Leakage Current
5nA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
500mA
Output Current-Max
0.2A
Halogen Free
Halogen Free
Current - Average Rectified (Io)
200mA DC
Forward Voltage
1.25V
Max Reverse Voltage (DC)
75V
Average Rectified Current
200mA
Reverse Recovery Time
3 μs
Peak Reverse Current
5nA
Max Repetitive Reverse Voltage (Vrrm)
75V
Capacitance @ Vr, F
2pF @ 0V 1MHz
Peak Non-Repetitive Surge Current
500mA
Recovery Time
3 μs
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BAS116LT3G Overview
A maximum reverse leakage current of 5nA volts is produced by this device.This device has an average rectified current of 200mA volts.As an unwanted derivative of its primary action, this electronic or electrical device produces 300mW heat.Forward current is allowed to reach a value of zero.The least amount of 300mW heat is generated by electronic or electrical devices (loss of energy).Surge currents can be used up to 500mA.The maximum output current is 0.2A.Datasheets indicate that the peak reverse is 5nA.

BAS116LT3G Features
a maximal reverse leakage current of 5nA volts
an average rectified current of 200mA volts
the least amount of 300mW heat (energy loss)
0.2A is the maximum value
the peak reverse is 5nA

BAS116LT3G Applications
There are a lot of ON Semiconductor
BAS116LT3G applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

BAS116LT3G More Descriptions

Rectifier Diode Small Signal Switching 0.2A 3000ns 3-Pin SOT-23 T/R
BAS116LT1G Series 75 V 200 mA Surface Mount Switching Diode - SOT-23-3
Rectifier Diode, Blank, 1 Phase, 1 Element, 0.2A, 75V V(RRM), Silicon, TO-236
75V -55¡Í~ 150¡Í@(Tj) 300mW Single 1.25V@150mA 3us 5Ã×A@75V 200mA SOT-23 Switching Diode ROHS

Product Comparison

The three parts on the right have similar specifications to BAS116LT3G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Diode Element Material

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Power Dissipation

Voltage - Forward (Vf) (Max) @ If

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Output Current-Max

Halogen Free

Current - Average Rectified (Io)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Recovery Time

RoHS Status

Lead Free

Mount

Weight

Series

Published

View Compare
BAS116LT3G

ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

4 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

Rectifier Diodes

300mW

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

BAS116

3

Not Qualified

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

5nA @ 75V

300mW

1.25V @ 150mA

200mA

5nA

-55°C~150°C

500mA

0.2A

Halogen Free

200mA DC

1.25V

75V

200mA

3 μs

5nA

75V

2pF @ 0V 1MHz

500mA

3 μs

ROHS3 Compliant

Lead Free

-

-

-

-

-
BAS16-HE3-18

Vishay Semiconductor Diodes Division

-

15 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

-

-

DUAL

GULL WING

260

10

-

3

-

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 75V

-

1.25V @ 150mA

150mA

-

-55°C~150°C

-

0.15A

-

-

1.25V

75V

150mA

6 ns

-

75V

4pF @ 0V 1MHz

2A

-

ROHS3 Compliant

-

Surface Mount

8.788352mg

Automotive, AEC-Q101

2016

BAS116LT3G vs BAS16-HE3-18
BAS116TT1G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Surface Mount

SC-75, SOT-416

YES

3

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

-

Rectifier Diodes

360mW

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

BAS116

3

-

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

5nA @ 75V

-

1.25V @ 150mA

200mA

80nA

-55°C~150°C

500mA

0.2A

Halogen Free

-

-

75V

200mA

3 μs

5nA

75V

2pF @ 0V 1MHz

-

3 μs

ROHS3 Compliant

Lead Free

-

-

-

-

BAS116LT3G vs BAS116TT1G
BAS16-G3-08

Vishay Semiconductor Diodes Division

-

15 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

SILICON

Tape & Reel (TR)

e3

yes

Active

1 (Unlimited)

3

EAR99

150°C

-55°C

8541.10.00.70

-

-

DUAL

GULL WING

260

10

-

3

-

1

Single

Small Signal =< 200mA (Io), Any Speed

Standard

1μA @ 75V

-

1.25V @ 150mA

150mA

-

-55°C~150°C

-

0.15A

-

-

-

75V

150mA

6 ns

-

75V

4pF @ 0V 1MHz

2A

-

ROHS3 Compliant

-

Surface Mount

8.107964mg

Automotive, AEC-Q101

2014

BAS116LT3G vs BAS16-G3-08